In perovskite solar cells (PSCs), a defective perovskite (PVK) surface and cliff‐like energy offset at the interface always slow down the charge extraction; meanwhile, interface ion diffusion causes oxidation of the metal electrode, inducing device instability. Here, the in situ grown 2D‐(CH3NH2)3Sb2I9 (MA3Sb2I9) on the back surface of MAPbI3 results in a more robust interface. MA3Sb2I9 changes the MAPbI3 surface to p‐type and thus acts like a back surface field to drive charge extraction and suppress recombination, resulting in an obviously higher fill factor (FF) = 0.8 and power conversion efficiency (PCE) = 20.4% of SnO2/MAPbI3/MA3Sb2I9/Spiro‐OMeTAD (2,2′,7,7′‐Tetrakis[N,N‐di(4‐methoxyphenyl)amino]‐9,9′‐spirobifluorene) PSC than the pure MAPbI3 device. More importantly, strong chemical bonding of SbI prohibits ion diffusion, largely enhancing the thermal stability and longtime stability. Here, special 2D‐MA3Sb2I9 constructs’ robust band alignment and chemical environment at the interface are highlighted for efficient and stable PSCs.