Effect of HPHT annealing on the photoluminescence of synthetic diamonds grown in the Fe–Ni–C system

Yelisseyev, A.; Lawson, Simon C.; Силдос, И.; Osvet, Andres; Nadolinny, V. A.; Feigelson, B. N.; Baker, J M; Newton, M. J.; Yuryeva, O. P.

doi:10.1016/s0925-9635(03)00256-5

Cited by 52 publications

(47 citation statements)

References 25 publications

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“…corresponds to ZPL of Nickel-Nitrogen related impurities [14,15], and the sharp peak at 757 nm is the one phonon Raman scattering line of the diamond lattice (1332 cm -1 ) associated to 687 nm excitation wavelength. Note the remarkable property that photoluminescence is concentrated in the ZPL even at room temperature.…”

Section: Resultsmentioning

confidence: 99%

Single-photon emission in the near infrared from diamond colour centre

Jacques

Treussart

et al. 2006

Journal of Luminescence

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Optically active colour centres based on Nickel-Nitrogen impurities are observed in natural diamond under continuous-wave excitation. The spectral analysis shows that the single emitters have a narrow-band emission in the near infrared, around 780 nm, which is almost entirely concentrated in the zero phonon line even at room temperature. The colour centre excited-state lifetime is as short as 2 ns, and the photoluminescence is linear polarized. These striking features pave the way to the realization of a triggered single photon source based on this colour centre emission well suited for open-air single-photon Quantum Key Distribution operating in day-light conditions.

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Section: Resultsmentioning

confidence: 99%

Single-photon emission in the near infrared from diamond colour centre

Jacques

Treussart

et al. 2006

Journal of Luminescence

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“…Nevertheless, there were no reports in the literature regarding a controlled fabrication of the NE8 center by ion implantation. This is rather surprising since this defect can be routinely observed in bulk quantities (although not on a single level) after HPHT annealing of nickel containing diamonds [81,82,86,88]. This may indicate that a single NE8 center is a dim center and can not be resolved optically over the background PL.…”

Section: Direct Implantation Into Nitrogen Containing Bulk Diamond Crmentioning

confidence: 97%

“…In some cases an additional HPHT annealing process is applied to enhance the formation probability of these centers [88,89]. It was also shown, that the NE4 defect, ascribed to a nickel atom in a di-vacancy [90,91], acts as nucleus for aggregation of nitrogen atoms.…”

Section: Transition Metalsmentioning

confidence: 99%

“…It was also shown, that the NE4 defect, ascribed to a nickel atom in a di-vacancy [90,91], acts as nucleus for aggregation of nitrogen atoms. Once the NE4 defect is formed, up to four nitrogen atoms can be captured consecutively in different configurations to form the rest of the NEx family [88]. Most of the NEx complexes were also observed optically, with the NE1 centered in the UV (ZPL at 472 nm) and NE8 centered in the near infra-red (NIR) (ZPL at 794 nm).…”

Section: Transition Metalsmentioning

confidence: 99%

“…However, most of the work reported recently used native nickel color centers present originally in HPHT crystals [81,88,121], rather than introducing nickel atoms by ion implantation. Earlier work, performed in the 80's showed that similar nickel related PL lines can be also found in CVD diamond implanted with nickel ions and subsequently annealed [122].…”

Section: Other Ionsmentioning

confidence: 99%

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Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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Exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Single photon sources are one of these fundamental constituents that are presently pushing the bounds of existing materials and fabrication techniques. Color centers in diamond are very attractive in this respect since they are the only photostable solid-state single photon emitters operating at room temperature known to date.The Nitrogen-Vacancy (NV) complex is one example of such an optical center and has been subject to intensive research due to the availability of optical readout of its individual electronic spin state. However, the NV center has fundamental limitations: strong phonon coupling of the excited state which results in a broad photoluminescence spectrum (~ 100 nm) of which the zero-phonon line makes up only 4%. Emission of single photons in the zero phonon line is then extremely weak, typically on the order of a few thousands of photons per second. Such count rates are insufficient for the realization of advanced quantum information processing protocols.To move beyond the limitations of the NV there is an emerging need to identify and fabricate novel diamond based single photon emitters with improved photo-physical characteristics. Development of such emitters is the main goal of this thesis.We first concentrate on the recent progress in materials science and fabrication techniques of high quality nanodiamond crystals. We demonstrate the ability to grow high quality, submicron sized diamond crystals with a control over their final size and density using a microwave assisted chemical vapor deposition.We then study two methodologies to engineer diamond based single photon emitters in the grown nanodiamonds. In the first, nickel is implanted into the substrate onto which the nanocrystals are subsequently grown. During the diamond growth, the substrate is slightly etched and the nickel atoms diffuse and incorporate into the growing crystals. In the second we employ direct ion implantation of nickel into already deposited individual diamond nanocrystals. Optical and correlation spectroscopy measurements reveal that these methodologies are effective to fabricate nickel related single photon emitters, with zero phonon lines centered in the near infra-red and a short excited state lifetime (~3 ns).ii Furthermore, the ability of diamond to host various luminescence centers prompted the discovery of a new class of ultra bright single photon emitters. These new emitters found in diamond crystals grown on sapphire substrate and assigned to chromium, which is present in the substrate and incorporated into the crystal during the growth. Nanodiamonds hosting these centers deliver outstanding performance such as narrow photoluminescence in the near infra-red and ultra bright single photon emission with count rate of ~ 3.2×10 6 counts/s -the brightest single photon source known to date.Importantly, some of the emitters exhibit a photon statistics without any photon bunching at saturation, indicating a two-...

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Crystal Growth of Diamond

Kanda

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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Effect of HPHT annealing on the photoluminescence of synthetic diamonds grown in the Fe–Ni–C system

Cited by 52 publications

References 25 publications

Single-photon emission in the near infrared from diamond colour centre

Single-photon emission in the near infrared from diamond colour centre

Novel Single Photon Emitters Based on Color Centers in Diamond

Crystal Growth of Diamond

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