Effect of holmium substitution on structural and electrical properties of barium zirconate titanate ferroelectric ceramics

Jha, P. C.; Jha, A. K.

doi:10.1016/j.ceramint.2013.10.087

Cited by 12 publications

(4 citation statements)

References 44 publications

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“…Temperature-stable dielectric materials in MLCC often adopt the core-shell structured BaTiO 3 ceramics, in which a fine grain consists of a tetragonal BaTiO 3 core and a cubic surface layer consisting of Ho 2 O 3 and other oxide, such as Ho/Mg 7 , 47 , Ho/Mn 48 , Ho/Zr, 49 , 50 Ho/Dy 8 etc. The incorporation of additives ions into BaTiO 3 particles will reduce dielectric permittivity and dielectric-temperature stability.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence associated with the site occupations of Ho3+ ions in BaTiO3

Guan

2017

Sci Rep

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A nominal (Ba 1−x Ho x )Ti 1−x/4 O 3 (x = 0.01) (BHTH) ceramic with a single-phase tetragonal structure was prepared at 1400 °C using the solid-state reaction method. The analysis on the defect chemistry revealed that the real formula of BHTH is (Ba 1−x Ho 3x/4 )(Ti is known to be an amphoteric dopant in BaTiO 3 polycrystalline ceramic and its solid solubility is dependent on the Ba/Ti ratio and sintering temperature (T s ). In the Ti-rich case, Ho 3+ was considered to to occupy the Ba site to induce Ti vacancies and the solid solubility limit was relatively small, only x = ~1.4% at T s = 1400 °C; the formula was described as (Ba 1−x Ho x )Ti 1−x/4 O 3 10 . Higher T s is generally required for the incorporation of Ho 3+ into the Ti site because of a relatively larger ionic size of Ho 3+ compared to Ti 4+ (Table 1) 16 and TiO 6 octahedrons characteristic of the skeleton of the perovskite structure. In the Ba-rich case, the solubility limit was reported to be x = ~15% at T s = 1550 °C and the formula was described as Ba(Ti 1−x Ho x )O 3−x/2 with O vacancies 10,14,15 . However, Ti vacancies and O ones had not been confirmed in Ho-doped BaTiO 3 and one is hard to avoid questioning a single site-occupation mode due to the amphoteric nature of Ho 3+ . On the other hand, the structural information of BaTiO 3 doped with most rare earths such as La [17][18][19][20] , Ce

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Section: Resultsmentioning

confidence: 99%

Photoluminescence associated with the site occupations of Ho3+ ions in BaTiO3

Guan

2017

Sci Rep

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“…The shifting of the peaks indicates that the interplaner spacing decreases with increases in the SF content. This decrease in the lattice parameters could be attributed to the simultaneous substitution of ions with different ionic radii at the A-site and B-site of BZT, such as Sm 3+ (1.24Å) for Ba 2+ (1.61Å) and Fe 3+ (0.645Å) for Zr 4+ /Ti 4+ (0.72Å/0.605Å) or to reduce bond length due to high electron affinity of doped atoms in the system and resulting shrinkage of the cell volume [1,5]. XRD patterns for all the prepared samples were refined using Le-Bail fitting, as shown in Figure 2(a-d).…”

Section: Methodsmentioning

confidence: 99%

“…In order to reduce the Curie temperature (T c ) and the dielectric loss at low frequencies, SrO or ZrO 2 has been used as a substituent. Ba 1-x Sr x TiO 3 (BST) has been widely studied due to its applications in microwave tunable devices [5,6] because of the strong electric field dependence of its dielectric constant. In spite of these interesting electrical properties, a considerable dielectric loss at higher frequencies restricts its practical applications [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Influence of samarium and iron substitution on structural and electrical properties of barium zirconate titanate solid solutions

Kaur

Singh

2019

Journal of Asian Ceramic Societies

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Solid solutions of (x)SmFeO 3 -(1-x)Ba(Zr 0.05 Ti 0.95 )O 3 : x = 0, 0.21, 0.22 and 0.23 were synthesized by the solid-state reaction route. Le-Bail analysis of the X-ray diffraction data and Raman spectra revealed the presence of the tetragonal phase (P4mm space group 99). The remnant polarization (P r ) was~4.08 µC/cm 2 and 1.04 µC/cm 2 for x= 0 and x= 0.21, respectively, while lossy loops were observed for x≥ 0.22. Canting of the antiferromagnetic spins and ferromagnetic exchange mechanism was responsible for the ferromagnetic feature in the samples. An increase in remnant magnetization (M r ) was observed with increases in x. The Nyquist plots revealed the existence of grain and grain boundaries in the overall impedance. Separation of the normalized plots of impedance (Z˝) and modulus (M˝) spectra indicated localized motion of the charge carriers in the sample. The Maxwell-Wagner model fits very well in the lowfrequency region (10 5 Hz). The ac conductivity obeyed the Universal Jonscher's Power law. The variations in the exponent n suggest that the conduction mechanism conforms to the small polaron hopping mechanism.

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“…The dielectric constants of all BST films drop with increasing frequency in general. According to the literature [33][34][35], the fall in dielectric constants might arise from the fact that the polarization does not occur instantaneously with the application of the electric field because of inertia. The loss and fall in dielectric constant values may occur as a result of the delay in reaction to the applied alternating electric field.…”

Section: Dielectric Propertiesmentioning

confidence: 99%

Effects of Ba²⁺/Sr²⁺ ratio on the microstructure, dielectric and ferroelectric properties of Ba_xSr_(1−x)TiO₃ films prepared by micro-arc oxidation

Wang

Zuo

et al. 2021

Surface Engineering

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Ba x Sr (1-x) TiO 3 (BST) thin films are in situ deposited on a Ti matrix through the micro-arc oxidation technique, using a mixed aqueous solution of Ba(OH) 2 •8H 2 O, Sr(OH) 2 •8H 2 O and 0.05 M EDTA as the electrolyte. The influence of the Ba 2+ /Sr 2+ ratio on the phase composition, microstructure and properties of the BST thin films is investigated. Ba 0.6 Sr 0.4 TiO 3 , Ba 0.5 Sr 0.5 TiO 3 , and Ba 0.4 Sr 0.6 TiO 3 thin films have a cubic phase, while Ba 0.8 Sr 0.2 TiO 3 and Ba 0.7 Sr 0.3 TiO 3 thin films have a tetragonal phase. When the concentration of Ba 2+ in the electrolyte surpasses that of Sr 2+ , the width of micro-arc holes and the surface roughness of the film grow as the Ba 2+ concentration rises. Furthermore, the dielectric and ferroelectric properties of BST films are favorably connected with the surface morphology. When the Ba 2+ concentration is 0.06 M, the film has the best compactness and smoothness. In addition, the highest capacitance and lowest dielectric loss are achieved.

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Effect of holmium substitution on structural and electrical properties of barium zirconate titanate ferroelectric ceramics

Cited by 12 publications

References 44 publications

Photoluminescence associated with the site occupations of Ho3+ ions in BaTiO3

Photoluminescence associated with the site occupations of Ho3+ ions in BaTiO3

Influence of samarium and iron substitution on structural and electrical properties of barium zirconate titanate solid solutions

Effects of Ba²⁺/Sr²⁺ ratio on the microstructure, dielectric and ferroelectric properties of Ba_xSr_(1−x)TiO₃ films prepared by micro-arc oxidation

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Effect of holmium substitution on structural and electrical properties of barium zirconate titanate ferroelectric ceramics

Cited by 12 publications

References 44 publications

Photoluminescence associated with the site occupations of Ho3+ ions in BaTiO3

Photoluminescence associated with the site occupations of Ho3+ ions in BaTiO3

Influence of samarium and iron substitution on structural and electrical properties of barium zirconate titanate solid solutions

Effects of Ba2+/Sr2+ ratio on the microstructure, dielectric and ferroelectric properties of BaxSr(1−x)TiO3 films prepared by micro-arc oxidation

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Effects of Ba²⁺/Sr²⁺ ratio on the microstructure, dielectric and ferroelectric properties of Ba_xSr_(1−x)TiO₃ films prepared by micro-arc oxidation