Effect of high temperature rapid thermal annealing on optical properties of InGaAsP grown by molecular beam epitaxy

Xiao, Meng; Chen, Guifeng; Yang, Runqing; Yang, Weishen; Ji, Lian; Yuan, Zhengbing; Dai, Pengcheng; Tan, Minghong; Wu, Yuanyuan; Li, Xuefei; Lu, Shulong

doi:10.1364/ome.7.003826

Cited by 3 publications

(2 citation statements)

References 22 publications

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“…In addition to the TiO 2 layer design and using light-trapping strategies, the InGaAsP quality could thus also be investigated to improve the solar cell performance. This could be done by modifying the growth conditions or proceeding to heat [23] or plasma [3] treatments after growth.…”

Section: Resultsmentioning

confidence: 99%

Narrow‐Bandgap InGaAsP Solar Cell with TiO₂ Carrier‐Selective Contact

Tournet

Butson

Narangari

et al. 2021

Physica Rapid Research Ltrs

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Carrier‐selective contacts offer promising opportunities for solar cells. By alleviating the need for p–n junctions and acting as passivation layers, they significantly simplify the device design and fabrication. Herein, this strategy is applied to a narrow‐bandgap (≈0.91 eV) InGaAsP solar cell. Such a solar cell, lattice‐matched to InP, possesses a bandgap ideal for the bottom subcell of a tandem cell. It is shown that TiO2 forms an electron‐selective contact to InGaAsP. The TiO2/InGaAsP solar cell exhibits a short‐circuit current density of 35.2 mA cm−2, an open‐circuit voltage of 0.49 V, and an efficiency of 8.9%. The cell J–V characteristics and quantum efficiency highlight the beneficial aspect of TiO2 as a passivating layer for InGaAsP. The reduced open‐circuit voltage and lower response at longer wavelengths, on the other hand, indicate that the quaternary alloy material quality could be further improved to increase the carrier diffusion length. Nevertheless, the performance of this simplified electron‐selective contact solar cell structure is comparable to conventional p–n junction 1 eV InGaAsP solar cells reported in the literature, highlighting the promise toward lower‐cost photovoltaic tandem cells.

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Section: Resultsmentioning

confidence: 99%

Narrow‐Bandgap InGaAsP Solar Cell with TiO₂ Carrier‐Selective Contact

Tournet

Butson

Narangari

et al. 2021

Physica Rapid Research Ltrs

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“…The minority carrier lifetime for solar cells is extremely sensitive to defects and increases with the decrease of defect concentration [15][16][17]. Defects in semiconductor material can be recovered via thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation

Fang

Tao

Bai

et al. 2020

International Journal of Photoenergy

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Radiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Then, thermal annealing was carried out at 120°C. We found that the proportion of defect recovery after annealing decreases with increasing irradiation fluence. The minority carrier lifetime increases with decreasing defect concentration, which means that the electrical performance of the solar cell is improved. We calculated the defect concentration and minority carrier lifetime with numerical simulation and modeled an improved annealing kinetic equation with experimental results.

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