Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs

Hung, Mai Phi; Chare, Christopher; Nag, Manoj; Meux, A. de Jamblinne de; Genoe, Jan

doi:10.1109/ted.2018.2837084

Cited by 9 publications

(5 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Postannealing of the devices was not possible for F:In–O even at relatively low temperature, as the F – content rapidly declines, unlike typical oxide films (Figure S8). , Also annealing/postannealing under N 2 (lower O 2 partial pressure) would alter the baseline In–O electronic properties, , and a major objective of this work is to elucidate effect of F – doping in In–O. Enhanced switching behavior might be obtained by patterning the channel material; however, conventional AZ lithography degrades the F:In–O films.…”

Section: Resultsmentioning

confidence: 99%

“…Thus, we speculate that F – doping when nanocrystalline domains are present as in PVD-deposited metal oxide thin films may explain the mobility increase in these films. − In contrast, the F:In–O thin films synthesized in the present study are prepared by a very low-temperature/short annealing time procedure and are thus reasonably expected to have fewer nanocrystalline inclusions as opposed to long postannealing treatments (350 °C for 20 min to 3 h) reported for some F – -doped metal oxides. − Therefore, a decline in TFT mobility is observed versus the F – content as expected from the present computational and EXAFS data. We also note that these films cannot be crystallized as in post-deposition annealing studies at relatively low temperature and low humidity, the F – content rapidly declines (Figure S8), unlike typical combustion-synthesized oxide films. , Also annealing/postannealing under N 2 (lower O 2 partial pressure) would alter the baseline In–O electronic properties. , …”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Structure–Charge Transport Relationships in Fluoride-Doped Amorphous Semiconducting Indium Oxide: Combined Experimental and Theoretical Analysis

et al. 2019

View full text Add to dashboard Cite

Anion doping of transparent amorphous metal oxide (a-MO) semiconductors is virtually unexplored but offers the possibility of creating unique optoelectronic materials owing to the chemical tuning, modified crystal structures, and unusual chargetransport properties that added anions may impart. We report here the effects of fluoride (F − ) doping by combustion synthesis, in an archetypical metal oxide semiconductor, indium oxide (In−O). Optimized fluoride-doped In−O (F:In−O) thin films are characterized in depth by grazing incidence X-ray diffraction, X-ray reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and extended X-ray absorption fine structure (EXAFS). Charge-transport properties are investigated in thin-film transistors (TFTs), revealing that increasing fluoride content (0.0 → 1.57 atom %) slightly lowers the on-current (I on ) and electron mobility due to scattering from loosely bound F − centers but enhances important TFT performance parameters such as the I on /I off ratio, subthreshold swing, and bias stress stability, yielding superior TFT switching versus undoped In−O. These results are convincingly explained by ab initio molecular dynamics simulations and density functional theory electronic structure calculations. Combined with the EXAFS data, the experimental and theoretical results show that F − hinders crystallization by enhancing the local and medium-range disorder, promotes a uniform film morphology, and favors the formation of deeper, more localized trap states as compared to F − -free In−O. These data also show that the local organization and electronic structure of amorphous F − -doped oxide semiconductors are significantly different from those of F − -doped crystalline oxide semiconductors and suggest new avenues to further modify a-MOs for enhanced optoelectronic properties.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Structure–Charge Transport Relationships in Fluoride-Doped Amorphous Semiconducting Indium Oxide: Combined Experimental and Theoretical Analysis

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Meanwhile, UV phototransistors with precise control over composition can enhance the device performance. Hence, the device performance with moderate oxygen or hydrogen flow can lead to the control of oxygen vacancy concentration [20][21][22]. Photoresponsivity of samples A, B, and C is depicted in Figure 7.…”

Section: Mg 2p In 3d O 1smentioning

confidence: 99%

Ultraviolet Photodetection Application in Magnesium Indium Oxide Thin Film Transistors via Co-Sputtering Deposition

et al. 2020

View full text Add to dashboard Cite

A magnesium-doped indium oxide (In2O3:Mg) ultraviolet (UV) thin film phototransistor was fabricated via cosputtering of MgO and In2O3. Three samples with different sputtering power values of In2O3 ranging from 40 to 60 W, namely, sample A with 40 W, sample B with 50 W, and sample C with 60 W, were used in this study. Results confirmed that oxygen vacancy concentration evidently indicates indium content. The experimental results showed that responsivities of samples, defined as the ratio of photocurrent under illumination per input power, increase from 0.0086 to 2.6 A/W. Rejection ratios were 1.2 × 104, 4.3 × 105, and 4.8 × 105 for samples A, B, and C, respectively. Based on our results, sample C is the best among the three MgInO UV phototransistors investigated in this study.

show abstract

“…[ 7,8 ] For AM display applications, the amorphous InGaZnO (a‐IGZO) TFT is the first successfully commercialized device. However, the μ FE of the a‐IGZO TFT [ 9–12 ] is only 10–15 cm 2 V –1 s –1 , limiting its application in high resolution and high refresh rate displays. [ 13,14 ] By replacing gallium with tin as the carrier source of electrons in the thin film, InSnZnO (ITZO) TFTs [ 15–17 ] exhibit a much higher μ FE of over 25 cm 2 V –1 s –1 , which is mainly resulted from better‐defined paths for electron percolation conduction and smaller electron effective mass.…”

Section: Introductionmentioning

confidence: 99%

Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors

Chen

Zhang

Deng

et al. 2022

Adv Materials Inter

View full text Add to dashboard Cite

Thin‐film transistors (TFTs) in practical operations are inevitably impacted by moisture and temperature. An investigation on the joint effect of environmental moisture and working temperature on device characteristics and instability is becoming necessary. However, few related studies have been performed. In this work, a low‐temperature (LT) annealing in air is proposed to simulate the working conditions of TFTs in display applications. The effect of moisture exchange caused by LT annealing on device characteristics and instability of InSnZnO (ITZO) TFTs is systematically investigated. Combined with X‐ray photoelectron spectroscopy analysis, TCAD design simulation, and the measurement of relative humidity (RH) change on the device surface, a model considering water diffusion and water ionization is proposed. The negative shift of the transfer curve is attributed to the extra electrons released from the water ionization and the positive‐bias‐stress‐induced instability is mainly attributed to the generation of interstitial/substitutional hydrogens and aggregation of hydrogen ions at the backchannel. The temperature and the RH on the device surface jointly determine the moisture diffusion direction. Furthermore, the model is verified by an LT vacuum annealing. The results and the model will be beneficial for the further reliable design of ITZO TFTs in commercial applications.

show abstract

Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs

Cited by 9 publications

References 19 publications

Structure–Charge Transport Relationships in Fluoride-Doped Amorphous Semiconducting Indium Oxide: Combined Experimental and Theoretical Analysis

Structure–Charge Transport Relationships in Fluoride-Doped Amorphous Semiconducting Indium Oxide: Combined Experimental and Theoretical Analysis

Ultraviolet Photodetection Application in Magnesium Indium Oxide Thin Film Transistors via Co-Sputtering Deposition

Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors

Contact Info

Product

Resources

About