Effect of High-K Dielectric on Drain Current of ID-DG MOSFET Using Ortiz-Conde Model

Deyasi, Arpan; Chowdhury, Anal Roy; Roy, Kaustuv; Sarkar, Angsuman

doi:10.1109/edkcon.2018.8770399

Cited by 7 publications

(1 citation statement)

References 26 publications

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“…To reduce the SCEs and fit these devices for circuit applications, gate control is, therefore, the subject of research. 5 The Multiple Gate FET (MUGFET) definition is, therefore, developed with proven superiority over the single gate devices. 6 Some new architectures are being developed under the MUGFET, such as double gate (DG) MOSFET, 7,8 gate all around (GAA) MOSFET, 9 quadruple gate (QG) MOSFET.…”

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Impact of high mobility III‐V compound material of a short channel thin‐film SiGe double gate junctionless MOSFET as a source

Rout

Dutta

2019

Engineering Reports

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In recent years, technology has embraced the use of Junctionless Double Gate Metal-Oxide-Semiconductor Field-Effect Transistors (JL DGMOSFET) to reduce Short Channel Effects (SCEs). This research presents a novel JL DGMOS-FET based on a highly doped N-type SiGe in which an III-V compound material is used at source regime. The III-V compound material GaSb with higher mobility and higher injection velocity is used as source material, whereas SiGe is considered for both channel and drain materials to produce a higher output current and low leakage current for the N channel JL DGMOSFET. In addition, high-k dielectric material HfO 2 is employed to improve the controllability of the gate at 20 nm channel length. Different parameters, such as I d , SS, g m , TGF, I on /I off ratio, C gs , and f T of a Symmetric JL DGMOSFET are studied and compared to existing works. The comparison shows that the proposed JL DGMOSFET outperforms the existing state of knowledge. The analysis is also being extended by including the trap charge for the symmetric JL DGMOSFET. Parametrically, the asymmetrical structure is finally studied. The proposed structure yields a higher I d of 40 mA, SS of 60.25 mV/decade, g m of 0.148 A/V, TGF of 3.69 V-1, I on /I off ratio of 3.41 × 10 13 , C gs of 3.78 × 10 −16 F and f T of 1.19 × 10 13 Hz, hence indicating an improved RF and DC analysis. K E Y W O R D Sasymmetric, cut-off frequency (f T ), donor traps, acceptor traps, gate drain capacitance (C gd ), gate source capacitance (C gs ), high-k dielectric, I on /I off ratio, junctionless double gate (JL DG) MOSFET, subthreshold swing, symmetric, transconductance (g m ), transconductance generation factor (TGF)

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confidence: 99%