Effect of (HfO2) X (Al2O3)1−X /SiO2 double-layered blocking oxide on program and erase speed in charge trapping memory devices

Oh, Jeong-Hoon; Ko, Eun Jung; Na, Heedo; Ko, Dae Hong; Sohn, Hyunchul

doi:10.1007/s00339-016-9719-1

Cited by 2 publications

(2 citation statements)

References 8 publications

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“…[3][4][5][6][7][8] Al 2 O 3 films have been also proposed as the blocking layer for the charge-trap memory cell of NAND flash memory devices because they can improve the retention of stored charge. [9][10][11][12][13][14] Al 2 O 3 films are used for the passivation of crystalline silicon in solar cells to reduce recombination losses at the Si surface due to a high fixed negative charge. [15][16][17][18][19][20] In the case of BSI CMOS sensors, an Al 2 O 3 film on top of the Si surface can reduce the dark current for the same reason as in solar cells.…”

Section: Introductionmentioning

confidence: 99%

Initial growth analysis of ALD Al₂O₃ film on hydrogen-terminated Si substrate via in situ XPS

Fukumizu

Sekine

Hori

et al. 2020

Jpn. J. Appl. Phys.

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The initial stage of Al2O3 films deposited by atomic layer deposition (ALD) on a H-terminated Si(001) wafer was investigated with in situ X-ray photoelectron spectroscopy. At deposition temperatures of 250 °C and 300 °C, no Al peak was detected for the first 10 ALD cycles. An Al peak was first observed at ALD cycle 12, and its intensity increased with increasing ALD cycle number. The 10 initial ALD cycles were defined as an incubation period. The Si 2p and Al 2p narrow spectra indicated that Si sub-oxide formed during the incubation period and trimethylaluminum (TMA) adsorbed on it after the incubation period. The incubation period at a growth temperature of 350 °C decreased to five ALD cycles because the H2O exposure at a higher temperature promoted the oxidation of the H-terminated Si surface and formed Si sub-oxide.

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Section: Introductionmentioning

confidence: 99%

Initial growth analysis of ALD Al₂O₃ film on hydrogen-terminated Si substrate via in situ XPS

Fukumizu

Sekine

Hori

et al. 2020

Jpn. J. Appl. Phys.

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“…The particular role of the blocking layer and effect of double-layered blocking oxide have been studied in [11].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

Novkovski

Paskaleva

Skeparovski

et al. 2018

Advances in Condensed Matter Physics

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Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO 2 /Al 2 O 3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-dielectrics on the − characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V), several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. − characteristics of stressed (with write and erase pulses) structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur) were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.

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Effect of (HfO2) X (Al2O3)1−X /SiO2 double-layered blocking oxide on program and erase speed in charge trapping memory devices

Cited by 2 publications

References 8 publications

Initial growth analysis of ALD Al₂O₃ film on hydrogen-terminated Si substrate via in situ XPS

Initial growth analysis of ALD Al₂O₃ film on hydrogen-terminated Si substrate via in situ XPS

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

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Effect of (HfO2) X (Al2O3)1−X /SiO2 double-layered blocking oxide on program and erase speed in charge trapping memory devices

Cited by 2 publications

References 8 publications

Initial growth analysis of ALD Al2O3 film on hydrogen-terminated Si substrate via in situ XPS

Initial growth analysis of ALD Al2O3 film on hydrogen-terminated Si substrate via in situ XPS

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

Contact Info

Product

Resources

About

Initial growth analysis of ALD Al₂O₃ film on hydrogen-terminated Si substrate via in situ XPS

Initial growth analysis of ALD Al₂O₃ film on hydrogen-terminated Si substrate via in situ XPS

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories