Effect of heterovalent substitution on the electrical and optical properties of ZnO(M) thin films (M = Ga, In)

Vorobyeva, N. A.; Rumyantseva, M. N.; Vasiliev, R. B.; Kozlovskii, V. F.; Soshnikova, Yu. M.; Филатова, Д. Г.; Baranchikov, А. Е.; Ivanov, V. K.; Гаськов, А.М.

doi:10.1134/s0036023614050192

Cited by 4 publications

(6 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Al 3+ and Mg 2+ doping leads to a strong decrease of this low-temperature reduction peak and of the EPR resonance signal around 2.04. This might then correspond to fewer oxygen defects present in ZnO:Al and ZnO:Mg. Likely, the “hardness” of the smaller and highly charged cations Al 3+ and Mg 2+ leads to a stronger binding of lattice oxygen and thus prevents the formation of oxygen vacancies . The different behaviors of Al 3+ and Ga 3+ dopants, despite their similar valence electron configurations, could be explained by the difference in polarizability and ionic radii of the dopants, properties in which Ga 3+ is much more similar to Zn 2+ in comparison to Al 3+ .…”

Section: Resultsmentioning

confidence: 99%

“…9 Ga 3+ on the other hand could be expected to preferentially occupy octahedral sites due to their larger ionic radius. 21,31 This is also supported by the analysis of the ZnO lattice parameters obtained by XRD 21 . Rietveld analysis revealed a higher unit cell volume for ZnO:Ga 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 24 and a slightly smaller volume for ZnO:Al (see Table S1 in the Supporting Information) supporting the assumption that Al 3+ occupies substitutional sites and Ga 3+ preferentially octahedral interstitials.…”

Section: Acs Catalysismentioning

confidence: 97%

See 1 more Smart Citation

Promoting Strong Metal Support Interaction: Doping ZnO for Enhanced Activity of Cu/ZnO:M (M = Al, Ga, Mg) Catalysts

et al. 2015

View full text Add to dashboard Cite

The promoting effect of Al, Ga, and Mg on the support in Cu/ZnO catalysts for methanol synthesis has been investigated. Different unpromoted and promoted ZnO supports were synthesized and impregnated with Cu metal in a subsequent step. All materials, supports, and calcined and activated catalysts were characterized by various methods, including contactless (microwave) conductivity measurements under different gas atmospheres. Small amounts of promoters were found to exhibit a significant influence on the properties of the oxide support, concerning textural as well as electronic properties. We found correlations between the conductivity of the ZnO support and the activity of the catalyst in the reverse water-gas shift reaction (rWGS) as well as in methanol synthesis. In rWGS the activation energy and reaction order in H₂ are decreased upon promotion of the ZnO support with the trivalent promoters Al³⁺ and Ga³⁺, indicating an electronic promotion. In methanol synthesis, results point to a structural promotion by Al³⁺ and Ga³⁺. A detrimental effect of Mg²⁺ doping was observed in both reactions. This effect is discussed in the context of the reducibility of ZnO under reaction conditions, which can be tuned by the promoter in different ways. The reducibility is seen as a critical property for the dynamic metal support interaction of the Cu/ZnO system

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Acs Catalysismentioning

confidence: 97%

Promoting Strong Metal Support Interaction: Doping ZnO for Enhanced Activity of Cu/ZnO:M (M = Al, Ga, Mg) Catalysts

et al. 2015

View full text Add to dashboard Cite

show abstract

“…In the case of samples A1, characteristic In 2 O 3 peak of (222) appeared prominent but for ZnO, the characteristic and minor peaks remained diminished. That could be because of the difference in ionic radii of In 3+ (0.094 nm) and Zn 2+ (0.074 nm) and precursor composition [43]. In the case of D1 thin films deposited from Ga: Zn 1:9 oxide source solutions' mixing ratio, characteristic ZnO major and minor peaks appeared as observed in the study of Al Dahoudi [39].…”

Section: Xrd Structural Analysismentioning

confidence: 88%

“…In the case of D1 thin films, wherein almost equal ionic radii of Zn 2+ and Ga 3+ competed for crystal growth resulting in further reduced crystallinity and increased scattering reducing carrier mobility and hence electrical conductivity [42]. Highly resistive behavior of C1 thin films (gallium-rich GZO, because of this were not characterized further other than resistivity and not applied in solar cell device) is due to excessive concentration of gallium that leads to a decrease in the degree of crystallinity and conductivity [43], decrease in electron density [47] and suppression of donor oxygen vacancies [48].…”

Section: Hall Effect Electrical Measurementsmentioning

confidence: 99%

Solution Combustion Synthesis of Transparent Conducting Thin Films for Sustainable Photovoltaic Applications

et al. 2020

View full text Add to dashboard Cite

Sunlight is arguably the most promising continuous and cheap alternative sustainable energy source available at almost all living places of the human world. Photovoltaics (PV) is a process of direct conversion of sunlight into electricity and has become a technology of choice for sustainable production of cleaner and safer energy. The solar cell is the main component of any PV technology and transparent conducting oxides (TCO) comprising wide band gap semiconductors are an essential component of every PV technology. In this research, transparent conducting thin films were prepared by solution combustion synthesis of metal oxide nitrates wherein the use of indium is substituted or reduced. Individual 0.5 M indium, gallium and zinc oxide source solutions were mixed in ratios of 1:9 and 9:1 to obtain precursor solutions. Indium-rich IZO (A1), zinc-rich IZO (B1), gallium-rich GZO (C1) and zinc-rich GZO (D1) thin films were prepared through spin coating deposition. In the case of A1 and B1 thin films, electrical resistivity obtained was 3.4 × 10−3 Ω-cm and 7.9 × 10−3 Ω-cm, respectively. While C1 films remained insulating, D1 films showed an electrical resistivity of 1.3 × 10−2 Ω-cm. The optical transmittance remained more than 80% in visible for all films. Films with necessary transparent conducting properties were applied in an all solution-processed solar cell device and then characterized. The efficiency of 1.66%, 2.17%, and 0.77% was obtained for A1, B1, and D1 TCOs, respectively, while 6.88% was obtained using commercial fluorine doped SnO2: (FTO) TCO. The results are encouraging for the preparation of indium-free TCOs towards solution-processed thin-film photovoltaic devices. It is also observed that better filtration of precursor solutions and improving surface roughness would further reduce sheet resistance and improve solar cell efficiency.

show abstract

“…Coating formation on metal and alloy surfaces is one of the most common ways to protect items from environmental impacts [1][2][3][4] and to specifically func tionalize their surfaces [5][6][7]. Plasma electrolytic oxi dation (PEO) is an outstanding route to form protec tive coatings [see 8-10 and other references].…”

mentioning

confidence: 99%

Composite coatings formed by plasma electrolytic oxidation and using telomeric tetrafluoroethylene solutions

Gnedenkov

Sinebryukhov

Mashtalyar

et al. 2015

Russ. J. Inorg. Chem.

View full text Add to dashboard Cite

Methods for forming protective coatings from tetrafluoroethylene (TFE) telomeric solutions were developed. A complex study of electrochemical, tribological, and hydrophobic properties of composite coat ings formed on magnesium alloys by plasma electrolytic oxidation, followed by deposition of a fluororganic material from TFE solutions, was carried out. Evidence was obtained for the enhanced corrosion resistance and wear resistance of those coatings. The composite layers were found to have hydrophobic properties.

show abstract

Effect of heterovalent substitution on the electrical and optical properties of ZnO(M) thin films (M = Ga, In)

Cited by 4 publications

References 15 publications

Promoting Strong Metal Support Interaction: Doping ZnO for Enhanced Activity of Cu/ZnO:M (M = Al, Ga, Mg) Catalysts

Promoting Strong Metal Support Interaction: Doping ZnO for Enhanced Activity of Cu/ZnO:M (M = Al, Ga, Mg) Catalysts

Solution Combustion Synthesis of Transparent Conducting Thin Films for Sustainable Photovoltaic Applications

Composite coatings formed by plasma electrolytic oxidation and using telomeric tetrafluoroethylene solutions

Contact Info

Product

Resources

About