GaTe thin lms are electrochemically deposited on indium tin oxide for photoelectrochemical applications. The electrochemical deposition behavior of GaTe in acidic solution of HTeO 2 + with Ga 3+ is studied with cyclic voltammetry combining with operando transmittance spectroscopy. Underpotential deposition of Ga on Te starts at potential of -0.35 V. The present of Ga 3+ in the solution can strongly suppressed the formation of H 2 Te. XPS analysis reveals that Ga-rich GaTe is deposited over a wide potential range. The photoelectrochemical performance of the thin lms as photocathodes is strongly dependent on the deposition potential. The GaTe lms deposited at -1.0 V produced the highest photocurrent of -0.06 mA cm − 2 with good stability. Meanwhile the lm deposited at -0.35 V shows improved performance during photoelectrochemical measurement, which can be ascribed to the increased GaTe content during photoelectrochemical measurements, as con rmed by XPS analysis.