Effect of heterojunction order between CaTiO3 and Mn doped SrTiO3 on memristive performance and its mechanism analysis

Yang, Yusheng; Cao, Zelin; Mao, Shuangsuo; Qin, Jiajia; Rao, Zhaowei; Liu, Mingnan; Ke, Chuan; Zhao, Yong; Sun, Bai

doi:10.1016/j.apmt.2023.101938

Cited by 2 publications

(3 citation statements)

References 59 publications

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“…The conduction mechanisms of the Ag/Cu x O/FTO, Ag/ZnO/FTO, Ag/NiO/FTO Ag/ZnO/Cu x O/FTO, and Ag/NiO/Cu x O/FTO devices are investigated by fitting appropriate charge transport models to the experimental I – V data, as shown in Figures S6, S7, S8, S9, and S10, respectively. Several charge transport models are available in the literature, including but not limited to Ohmic, Child’s square law, Poole–Frenkel, Hopping, and Fowler–Nordheim. , The best-fitting results for the charge transport are presented here. The model-fitting results obtained from the fabricated devices suggest that the positive-biased low- and high-voltage region HRS I – V data are well-fitted to the Ohmic and Child’s square law conduction models, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Several charge transport models are available in the literature, including but not limited to Ohmic, Child's square law, Poole− Frenkel, Hopping, and Fowler−Nordheim. 29,30 The best-fitting results for the charge transport are presented here. The modelfitting results obtained from the fabricated devices suggest that the positive-biased low-and high-voltage region HRS I−V data are well-fitted to the Ohmic and Child's square law conduction models, respectively.…”

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

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Electrical and Electrochemical Investigations on Copper Oxide-Based Monolayer and Bilayer Memristive Devices

Kundale,

Kurade,

Shivade

et al. 2024

ACS Appl. Electron. Mater.

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Resistive switching (RS) devices are the best choice for nonvolatile memory storage and neuromorphic computing applications due to their ease of fabrication, low power consumption, and long stability. In the past, monolayer metaloxide-based RS devices were studied to achieve the desired memory and artificial synaptic characteristics. However, very few studies were conducted on bilayer RS devices to get the desired RS characteristics. Given this, we fabricated bilayer metal oxide devices (ZnO/Cu x O and NiO/Cu x O) with low-cost and reliable electrochemical synthesis techniques. In the present study, we systematically investigated the RS properties of monolayer (Cu x O, ZnO, and NiO) and bilayer (ZnO/Cu x O and NiO/Cu x O) devices. We observed that bilayer-switching devices show good RS properties as compared to monolayer devices. In particular, the ZnO/Cu x O bilayer RS device showed good nonvolatile memory properties while the NiO/Cu x O RS device mimicked various synaptic learning properties. To get clarity on the RS mechanisms, we probed the electrochemical impedance spectroscopy (EIS) technique for both kinds of devices. The EIS study confirms the type-II and type I memristive effects present in the ZnO/Cu x O and NiO/Cu x O devices, respectively. We found that the electrodeposited bilayer-switching layer has potential in RS applications.

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Section: Resultsmentioning

confidence: 99%

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

Electrical and Electrochemical Investigations on Copper Oxide-Based Monolayer and Bilayer Memristive Devices

Kundale,

Kurade,

Shivade

et al. 2024

ACS Appl. Electron. Mater.

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show abstract

“…Studies carried out in this paper are more focused toward establishing the suitability of the material for applications in areas like development of highly efficient solar cell strutures, bio sensors and wearble electronic devices. In their recent research, Yusheng et al [28] focused on CaTiO 3 and Mn doped SrTiO 3 and proposed a practical approach to enhance the memristive properties of the device. This method sheds light on the impact of the interface effect on particle motion, thus establishing a basis for developing high-capacity and efficient memristive devices for artificial intelligence (AI) applications.…”

Section: Introductionmentioning

confidence: 99%

Analysing the suitability of CaTiO₃/Ca_1–xSr_xTiO₃/SrTiO₃ perovskite for fabrication of optoelectronic devices using QuantumATK tool: a study for electronic and optical properties

Chahar,

Mishra,

Sharma

2024

Phys. Scr.

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Calcium Titanate (CaTiO3) as a material has been researched for various applications like those in capacitors, piezoelectric devices and ceramic applications. Same has been possible owing to the exhibition of various characteristics of this material like high melting point (1,625°C) and dielectric properties. However, only limited studies have been conducted to understand the impact of Strontium (Sr) doping and possibility of adopting this material into any kind of optoelectronic applications. This paper carries on an in-depth analysis on CaTiO3 and study effect of Sr as a dopant on its properties. Analysis has been carried out using Quantum ATK tool based on DFT approximations. CaTiO3 perovskite properties were studied by using the GGA (Generalized Gradient Approximation) and PBE (Perdew-Burke-Ernzerhof) functionals, which are used with the LCAO calculator. As a result of the inclusion of Sr at the Ca site, the electronic band structure of CaTiO3 was changed by the introduction of a gamma point. Bandgap of CaTiO3 was analysed to be dependent on the Sr site concentration and increased from 2.3 eV (Direct bandgap) to 2.3612 eV (Indirect bandgap), when Sr and Ca site concentration were equal, but it decreased with further increase in Sr site concentration to 1.7155 eV. Pure CaTiO3's projected density of states changed after doping, providing evidence for the effects of the dopant on the system. As a result of an examination of the optical properties of both systems, it is found that CaTiO3 at 380nm (close to infrared) exhibits an effective extinction coefficient (k) value of 0.78, whereas at 600nm, the attenuation of light decreases to zero. This makes Sr doping in CaTiO3 another attractive candidate for optical devices in addition to its ability to change optical properties.

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Effect of heterojunction order between CaTiO3 and Mn doped SrTiO3 on memristive performance and its mechanism analysis

Cited by 2 publications

References 59 publications

Electrical and Electrochemical Investigations on Copper Oxide-Based Monolayer and Bilayer Memristive Devices

Electrical and Electrochemical Investigations on Copper Oxide-Based Monolayer and Bilayer Memristive Devices

Analysing the suitability of CaTiO₃/Ca_1–xSr_xTiO₃/SrTiO₃ perovskite for fabrication of optoelectronic devices using QuantumATK tool: a study for electronic and optical properties

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Effect of heterojunction order between CaTiO3 and Mn doped SrTiO3 on memristive performance and its mechanism analysis

Cited by 2 publications

References 59 publications

Electrical and Electrochemical Investigations on Copper Oxide-Based Monolayer and Bilayer Memristive Devices

Electrical and Electrochemical Investigations on Copper Oxide-Based Monolayer and Bilayer Memristive Devices

Analysing the suitability of CaTiO3/Ca1–xSrxTiO3/SrTiO3 perovskite for fabrication of optoelectronic devices using QuantumATK tool: a study for electronic and optical properties

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Analysing the suitability of CaTiO₃/Ca_1–xSr_xTiO₃/SrTiO₃ perovskite for fabrication of optoelectronic devices using QuantumATK tool: a study for electronic and optical properties