Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

Luysberg, M.; Kirch, D.; Trinkaus, H.; Holländer, B.; Lenk, St.; Mantl, S.; Herzog, H.‐J.; Hackbarth, T.; Fichtner, P.F.P.

doi:10.1063/1.1504496

Cited by 73 publications

(42 citation statements)

References 22 publications

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“…However, the He implanted sample shows an additional dechanneling peak (channel 480) due to the cavities formed at about 100 nm below the interface, which remain after the anneal. 10 Furthermore, we applied Si + ion implantation on an 88 nm thick Si 0.67 Ge 0.33 layer grown by MBE on a 100 nm SOI substrate. The sample was implanted with 150 keV Si + ions with a dose of 1 ϫ 10 14 cm −2 and annealed at 850°C for 600 s. Channeling investigations indicated, similar to Fig.…”

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confidence: 99%

Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation

Holländer

Buca

Mörschbächer

et al. 2004

Journal of Applied Physics

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The strain relaxation of pseudomorphic Si 1−x Ge x layers ͑x = 0.21, . . . , 0.33͒ was investigated after low-dose Si + ion implantation and annealing. The layers were grown by molecular-beam epitaxy or chemical vapor deposition on Si͑100͒ or silicon-on-insulator. Strain relaxation of up to 75% of the initial strain was observed at temperatures as low as 850°C after implantation of Si ions with doses below 2 ϫ 10 14 cm −2 . We suggest that the Si implantation generates primarily dislocation loops in the SiGe layer and in the underlying Si which convert to strain relaxing misfit segments. Strained Si films grown on strain-relaxed SiGe buffer layers will soon be applied for advanced microelectronic devices since strained Si exhibits significantly enhanced carrier mobilities and therefore, yields to transistors with higher transconductance and drive currents.1,2 However, a key problem is the fabrication of thin strain relaxed SiGe buffer layers, which serve as virtual substrates for the growth of strained silicon. The standard approach is the growth of several micrometer thick, compositionally graded buffer layers. 3Recently, it was shown that He + ion implantation and subsequent thermal annealing can successfully be employed to relax the strain of thin pseudomorphic SiGe layer grown on Si͑100͒.4-6 The required He + implantation doses to achieve substantial strain relaxation during the subsequent annealing are in the range of 5 ϫ 10 15 cm −2 to 2 ϫ 10 16 cm −2 . These relatively high doses lead to long implantation times and limit throughput of wafers in production and form voids in the underlying silicon. Previously it was shown that strain relaxation can also be achieved by H + implantation and annealing.4 However, this method was only successful forSiGe layers with Ge concentrations below 25 at. %. Enhanced strain relaxation due to the introduction of point defects by Ge + ion implantation at 400°C or the implantation of dopants ͑B,As͒ was reported, however, without revealing the resulting microstructure. 7,8 The use of ion implantation for strain relaxation has several advantages: It is easy to use, is highly reproducible, is area-selective by the use of masks, and is fully compatible with existing Si technology. Therefore, there is interest in the development of an ion implantation method, which allows efficient strain relaxation after annealing at moderate temperatures while maintaining a high sample quality. It is important to use ions, which require only a low dose and avoid contamination or unintended doping by the implanted ions.In this work, we have investigated the strain relaxation of pseudomorphic Si 1−x Ge x layers induced by low dose Si + ion implantation at room temperature and subsequent annealing. We also provide a preliminary explanation for the mechanism of strain relaxation. The layers were grown by chemical vapor deposition (CVD) and solid-source molecular-beam-epitaxy (MBE) on Si͑100͒ and on siliconon-insulator (SOI) wafers. The samples were characterized using transmission electron microsco...

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confidence: 99%

Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation

Holländer

Buca

Mörschbächer

et al. 2004

Journal of Applied Physics

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“…These cavities have special significance to capture the mobile impurities and structural defects which results in the reduction of strain. It has been reported that cavities can be used as an effective source of the strain relaxation of semiconductors hetrostructures [49]. Annealed samples presented enhanced strain relaxation in comparison to that of un-annealed ones, which is attributed to the capturing of defects by cavities during gettering process [50].…”

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confidence: 94%

Neon and Manganese Ion Implantation into AlInN

Majid¹

2012

Ion Implantation

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“…Reduction of strain at the interface always leads to a lower defect density. Earlier results show [11,12] that He implantation through a pseudomorphic Si-Ge layer into Si substrates and subsequent annealing at 800 1C lead to complete strain relaxation and defect-free Si-Ge layers in comparison with un-implanted samples. He bubbles were formed in the annealed implanted Si.…”

Section: Introductionmentioning

confidence: 95%

Propagation of misfit dislocations from AlN/Si interface into Si

Liliental-Weber¹,

Maltez²,

Xie³

et al. 2008

Journal of Crystal Growth

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a b s t r a c tA substantial improvement of the structural quality of GaN/AlN grown on He implanted Si has been described. Many misfit dislocations were redirected from the Al/Si interface and propagated to the Si substrate due to the formation of He bubbles in the substrate. Growth temperature of GaN/AlN was chosen to be the annealing temperature necessary for He bubble formation. The dependence on the He fluence, distance of He bubbles from the Si surface and cleaning procedure of the Si before growth have been described. The structural perfection of the GaN/AlN layers was compared to the layers grown on un-implanted Si.

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Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

Cited by 73 publications

References 22 publications

Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation

Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation

Neon and Manganese Ion Implantation into AlInN

Propagation of misfit dislocations from AlN/Si interface into Si

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