In order to improve the overall critical current characteristics of Cu sheathed in situ MgB2 wires a special architecture of the wire, and processing parameters were used. The study presents the influence of the ex situ MgB 2 chemical barrier between ex situ core and Cu, suppressing the reaction of Cu with Mg. Wires, doped with 10 at.% SiC of 18 nm average grain size, were fabricated from MgH 2 and B or from Mg and B powders, using the powder-in-tube method. The methods of rotary swaging or drawing were used as the alternating wire-forming processes. The samples were annealed under high Ar gas pressure (hot isostatic pressing) at 750• C and 1.0 GPa for 15 and 30 min. A significant difference in Cu distribution across the wires for a long and short time of sintering was observed. The formation of microstructure in the powder-in-tube process and the relationship between the microstructure and critical current density Jc values, are discussed in this paper.