Effect of heat treatment temperature on preparation and characterization of CuInSe2 thin films

Yadav, Jagavendra; Singh, M.

doi:10.1007/s10854-023-10111-8

Cited by 3 publications

(2 citation statements)

References 22 publications

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“…Therefore, substituting the anion Se by S is expected to change both VBM and CBM in CuInS 2 with respect to CuInSe 2 , but substituting In by Ga changes only the CBM but not the VBM in CuGaS 2 with respect to CuInS 2 . The forbidden bandwidth is the energy difference between CBM and VBM, which is observed at 1.02 eV for CuInSe 2 [32], and higher for CuInS 2 and CuGaS 2 according to the literature [33][34].…”

Section: Resultsmentioning

confidence: 84%

Evaporated Chalcopyrite Thin Films for Indoor Photovoltaic Applications

Guillén

2023

Advanced Energy Conversion Materials

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The feasibility of capturing indoor artificial light using chalcopyrite photovoltaic absorbers has been analyzed. For this purpose, various chalcopyrite compounds (CuInSe2, CuInS2 and CuGaS2) were prepared by evaporation and then measured to obtain their main structural, morphological and optical characteristics. On the other hand, several artificial light sources were selected (incandescent, halogen, fluorescent, high-pressure sodium, metal halide and LED lamps) and represented by their respective spectral radiance. The absorption characteristics of CuInSe2 and CuInS2 are optimal for collecting light from fluorescent lamps and warm or cool white LEDs, requiring only a small film thickness of about 0.6 μm to capture 90-100% of the light radiance. Otherwise, the efficiency of CuGaS2 is found to increase as the color temperature of the LED lamp increases, being always lower and more dependent on the film thickness than for the other evaporated compounds. The worst performances (collection of less than 50% of the light radiance) correspond to incandescent and halogen lamps, which have a significant emission in the infrared region outside the absorption range of the evaporated chalcopyrite films. These results provide guidelines for the design of chalcopyrite-based photovoltaic devices suitable for operation under different indoor lighting conditions.

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Section: Resultsmentioning

confidence: 84%

Evaporated Chalcopyrite Thin Films for Indoor Photovoltaic Applications

Guillén

2023

Advanced Energy Conversion Materials

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“…The SEM images of glass/SnO 2 :F/In x Se y /CuInSe 2 samples are shown in figure 9, where a homogeneous surface with agglomerated grains of different sizes and distributed uniformly throughout the CuInSe 2 surface, can be observed. It is possible to identify that the agglomerated grains have a cauliflower-like morphology, and such grains are made up of smaller hexagonal grains [29][30][31].…”

Section: Sem and Eds Analysismentioning

confidence: 99%

Physical properties of In_xSe_y and CuInSe₂ thin films with potential application in radiation detectors

Molina-Mil,

Sastré-Hernández,

Aguilar-Hernández

et al. 2024

Eng. Res. Express

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A study of InxSey and CuInSe2 thin films processed by the thermal co-evaporation technique by evaluating its physical properties is carried out. Both InxSey as well as CuInSe2 thin films were synthesized by multi-source thermal co-evaporation technique, using Knudsen-type effusion cells. The optical, structural, electrical, and morphological properties of each film were analyzed in order to determine the feasibility at the formation of a p-CuInSe2/n-InxSey heterojunction. InxSey films exhibited bandgap values in the range of 2.4 - 2.7 eV which was determined by UV-Vis spectroscopic analysis. Vibrational modes associated to In2Se3 as well as Se are presented in the InxSey films according to Raman studies. The irregular morphology of the grains on the InxSey surface, with an average size of 380 nm are related to both In2Se3 and Se materials according to Raman spectroscopy and Scanning Electron Microscopy analysis. The InxSey thin films showed resistivity vales around 10-3 Ω∙cm. The Hackee´s Figure of Merit (FOMH) analysis supported the physical assumption that InxSey thin films are feasible to be used as window layer in a photovoltaic device because of the high values of FOMH obtained for samples processed at 300 °C. On the other hand, an influence on the morphology of the CuInSe2 films was observed when the films were synthetized at different substrate temperature. Uniform CuInSe2 films with agglomerated cauliflower-like grains with an average size of 1.8 μm were observed by SEM. The presence of binary phases within the CuInSe2 compound were detected through Raman and X-Ray characterization. Average crystallite size of 61 nm and microstrain around 2.5 x10-3 were estimated for the CuInSe2 films through X-Ray analysis. According to the physical properties analyzed the InxSey/CuInSe2 semiconductor bilayer can be a suitable candidate for application in photovoltaic devices as well as charged particle detector.

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Optoelectronics characteristics of chemically synthesized Cu(In1-xGax)Se2 based Schottky and heterojunctions

Barman,

Handique,

Kalita

2023

Optical Materials

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Effect of heat treatment temperature on preparation and characterization of CuInSe2 thin films

Cited by 3 publications

References 22 publications

Evaporated Chalcopyrite Thin Films for Indoor Photovoltaic Applications

Evaporated Chalcopyrite Thin Films for Indoor Photovoltaic Applications

Physical properties of In_xSe_y and CuInSe₂ thin films with potential application in radiation detectors

Optoelectronics characteristics of chemically synthesized Cu(In1-xGax)Se2 based Schottky and heterojunctions

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Effect of heat treatment temperature on preparation and characterization of CuInSe2 thin films

Cited by 3 publications

References 22 publications

Evaporated Chalcopyrite Thin Films for Indoor Photovoltaic Applications

Evaporated Chalcopyrite Thin Films for Indoor Photovoltaic Applications

Physical properties of InxSey and CuInSe2 thin films with potential application in radiation detectors

Optoelectronics characteristics of chemically synthesized Cu(In1-xGax)Se2 based Schottky and heterojunctions

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Physical properties of In_xSe_y and CuInSe₂ thin films with potential application in radiation detectors