2004
DOI: 10.1016/j.jnucmat.2004.04.123
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Effect of heat treatment on the tensile strength and creep resistance of advanced SiC fibers

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Cited by 95 publications
(82 citation statements)
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“…Shah et al demonstrated that the creep resistance of metal-carbide was improved after heat treatment due to increase in crystallite size. The increase in crystallite size leads to stabilize the grain boundaries and thus improves creep resistance [31]. In addition, it was demonstrated that grain boundary sliding via slip dominates the creep process in case of finer crystallite size as compared to coarser [32].…”
Section: Resultsmentioning
confidence: 99%
“…Shah et al demonstrated that the creep resistance of metal-carbide was improved after heat treatment due to increase in crystallite size. The increase in crystallite size leads to stabilize the grain boundaries and thus improves creep resistance [31]. In addition, it was demonstrated that grain boundary sliding via slip dominates the creep process in case of finer crystallite size as compared to coarser [32].…”
Section: Resultsmentioning
confidence: 99%
“…Lowering the SiC sintering temperature is of great importance when incorporation of fibers, or in this case TRISO fuel particles, is intended. This is necessary since temperatures above 1900°C could result in major crystal growth in SiC fibers or grain growth in the SiC layer in TRISO particles, resulting in unacceptable deterioration in mechanical properties (Sha et al, 2004). The resulting NITE SiC microstructure is significantly, and importantly, different from that of conventional LPS.…”
Section: Manufacturing Of Fully Ceramic Microencapsulated Fuel Samplementioning
confidence: 99%
“…These significant properties exhibiting for the two SiC fibers profit from the impurities introduced while processing. The underlying mechanism of creep resistance is the grain boundary (GB) sliding controlled by grain size and GB characters [6,7] . It is suggested that these impurities atoms can change the GB characters, eg, nailing up GB atoms or changing GB electronic structures.…”
Section: Introductionmentioning
confidence: 99%