Effect of H2 dilution on a-CN:H films deposited by hot-wire chemical vapor deposition

Composition-Dependent Structural and Electronic Properties of α-(Si1−xCx)3N4

“…The third, low-compressibility, and superhard cubic spinel phase (γ-Si 3 N 4 ) was synthesized only in 1999, and its interesting properties were revealed by Ching et al through first-principles calculations. Meanwhile, carbon nitride (C 3 N 4 ), a material with the same structure as the α- and β-Si 3 N 4 phase, is expected to show an extremely high hardness. − However, it proved very challenging to synthesize high-quality crystalline β-C 3 N 4 − with the predicted superhard properties.…”

“…Meanwhile, carbon nitride (C 3 N 4 ), a material with the same structure as the Rand β-Si 3 N 4 phase, is expected to show an extremely high hardness. [9][10][11][12][13][14][15] However, it proved very challenging to synthesize high-quality crystalline β-C 3 N 4 [16][17][18][19] with the predicted superhard properties.…”

Hydrogen Dilution-Induced Chemical State Modification in Silicon Nanowires

“…Hydrogen dilution is believed to be an important process parameter in various CVD processes. [14][15][16][17][18][19][20][21][22][23][24] Because the exact role of hydrogen in synthesizing SiNWs is an open question, this study was initiated to answer this question. Some previous work has attempted to explain the effect of hydrogen in syntheses of carbon fibers and carbon nanotubes.…”

“…Hydrogen dilution is believed to be an important process parameter in various CVD processes. − Because the exact role of hydrogen in synthesizing SiNWs is an open question, this study was initiated to answer this question. Some previous work has attempted to explain the effect of hydrogen in syntheses of carbon fibers and carbon nanotubes. − First, the role of hydrogen is suggested to limit or alleviate the poisoning of the metal catalysts by elemental carbon. − Second, in the thin film deposition processes of silicon (microcrystalline, nanocrystalline) and silicon- or carbon-based alloys SiC:H, − SiN:H, SiOC:H, CN:H, etc. ), hydrogen plays a role in compromising between amorphous and crystalline fraction.…”

“…), hydrogen plays a role in compromising between amorphous and crystalline fraction. Many research groups − reported that a device-quality polycrystalline silicon film can be achieved by large hydrogen dilution. Third, hydrogen dilution retards the deposition rate by acting as a reducing agent but improves transport properties of silicon. , Fourth, hydrogen passivation reduces defect densities .…”