Effect of H₂‐N₂ Nitriding Atmospheres on the Properties of Reaction‐Sintered Si₃N₄

Creep Deformation of Reaction‐Sintered Silicon Nitrides

“…The stress exponent ofthe strain rate was determined by changing the load during an experiment and by replotting the strain-rate data from the isothermal creep experiments. The activation energy for the creep process was also determined by (1) replotting the isothermal creep data and (2) changing the temperature during a test and monitoring the response of the creep rate. In both the stress-change and temperature-change experiments, care was taken to allow sufficient time for transient effects accompanying the parameter change to dibsipak aiid for steady-state conditions to be reestablished.…”

Carbide, Nitride and Boride Materials Synthesis and Processing

“…Because the nitriding reaction is exothermic, controlled nitridation was developed by Mangels (1981) in which the nitriding reaction starts around 1273 K (1000°C) and is completed at about 1573 K (1300°C). Metallic silicon (SO powders are first green compacted with binders and additives, and then subsequently nitrided.…”

“…The cross-linking polymerization of the imide and subsequent crystallization are treatable with radiation, such as gamma-ray radiation (Ube Industries, 1986). Crystallization is exothermic, but less so than nitridation of silicon powder (Arrol, 1974;Mangels, 1981). If the chloride has not been removed, it will deposit in cooler regions along with imidochloride residues, possibly causing an overpressure in the reactor.…”

Processing of biomorphic Si3N4 ceramics by CVI-R technique with SiCl4/H2/N2 system

“…The properties of ceramics produced by this method can be affected by many process variables such as nitridation temperature, 13 composition of the nitridation gas, 14,15 impurities in the silicon as well as impurities in the nitridation atmosphere [16][17][18] .…”