Effect of Growth Time on the Characteristics of ZnO Nanorods

Idiawati, Riris; Mufti, Nandang; Taufiq, Ahmad; Wisodo, Hari; Laila, Ifa K R; Fuad, Abdulloh; Sunaryono, Sunaryono

doi:10.1088/1757-899x/202/1/012050

Cited by 39 publications

(18 citation statements)

References 29 publications

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“…Other factors that can modify the bandgap of ZnO nanorods are: growth time [47,48], aspect ratio [49], and substrate [50]. The value of E g = 3.18 eV for our ZnO nanorod layer is in agreement with the values reported in the literature [47,48]. The full width at half maximum (FWHM) of the ZnO PL peak is 25 nm, comparable with values obtained in epitaxial ZnO [51].…”

Section: Resultssupporting

confidence: 86%

“…Concerning the ZnO PL spectrum, the ZnO nanorod layer presents a lower bandgap energy (E g = 3.18 eV) than in bulk form (estimated as E g = 3.37 eV [1]), owing to the shifting of the valence band maximum and conduction band minimum of ZnO when prepared using a wet chemistry method [46]. Other factors that can modify the bandgap of ZnO nanorods are: growth time [47,48], aspect ratio [49], and substrate [50]. The value of E g = 3.18 eV for our ZnO nanorod layer is in agreement with the values reported in the literature [47,48].…”

Section: Resultsmentioning

confidence: 99%

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Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

et al. 2020

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Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal–organic vapor-phase epitaxy -grown epitaxial layer of p-doped GaN. Circular 200 μm-sized violet-emitting LEDs with a p-n contact distance as low as 3 μm exhibit a turn-on voltage of 3 V, and an emitting optical power at 395 nm of a few microwatts. Electroluminescence spectrum investigation shows that the emissive process can be ascribed to four different recombination transitions, dominated by the electron-hole recombinations on the ZnO side.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 99%

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

et al. 2020

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“…The characteristic peaks are noticed at wavenumbers 403, 493, and 702 cm −1 , which confirm the presence of ZnO. The ZnO vibration peaks are found to be in the wavenumber range from 400 to 520 cm −1 [16, 17]. Bundit and Wongsaprom [18] reported the FTIR investigation of ZnO nanostructures and claimed the vibrational peaks at 477 and 483 cm −1 corresponding to the ZnO stretching modes of nanoparticles and nanorods.…”

Section: Resultsmentioning

confidence: 98%

Electrochemical growth and characterisation of ZnO nanostructures for dye‐sensitised solar cells

Dubey¹,

Saravanan²

2020

Micro & Nano Letters

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“…The average dye-loading amounts, as estimated using four pristine ZnO/FTO photoelectrodes, increased with increasing growth time from 4 to 8 h (Tables 2 and S2 of the ESI). Dependence of growth time on the density of the ZnO nanostructures was reported, i.e., by extending the growth time, the length of the nanorods increased, but the density decreased due to the coalescence and their faster growth toward the c-axis direction [33][34][35]. This can lead to a larger surface area of ZnO nanorods in 4-8 h of the growth time, and therefore to an increase in dye-loading amount.…”

Section: Optimal Growth Time Of Zno Nanorodsmentioning

confidence: 99%

Enhancement in Photovoltaic Performance of Solar Cells by Electrostatic Adsorption of Dyes on ZnO Nanorods

et al. 2022

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ZnO nanorods were formed by chemical bath deposition on fluorine–doped tin oxide (FTO) glass and the photovoltaic performance of ZnO-based dye-sensitized solar cells (DSCs) was investigated. A DSC with 8 h-grown ZnO nanorods showed a higher power conversion efficiency (PCE) than devices with 4, 6, and 10 h-grown ones. Further improvement in PCE was achieved in a cell with a silver-ion-deposited ZnO/FTO electrode. By deposition of Ag+ on the surface of the 8 h-grown ZnO nanorods, the dye-loading amount increased by approximately 210%, compared to that of pristine ZnO nanorods, resulting in a 1.8-times higher PCE. A DSC with the pristine ZnO/FTO electrode showed a PCE of 0.629%, while in a device with the silver-ion-deposited ZnO/FTO, the PCE increased to 1.138%. In addition, interfacial resistance at the ZnO/dye/electrolyte was reduced to approximately 170 Ω from 460 Ω for the control cell with the pristine ZnO/FTO. We attributed the higher dye-loading amount in the silver-ion-deposited ZnO/FTO to the electrostatic attraction between the positively charged ZnO and carboxylate anions (–COO−) of the N719 dyes.

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Effect of Growth Time on the Characteristics of ZnO Nanorods

Cited by 39 publications

References 29 publications

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Electrochemical growth and characterisation of ZnO nanostructures for dye‐sensitised solar cells

Enhancement in Photovoltaic Performance of Solar Cells by Electrostatic Adsorption of Dyes on ZnO Nanorods

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