Effect of Growth Rate and Wafering on Residual Stress of Diamond Wire Sawn Silicon Wafers

Kumar, Arkadeep; Prasath, R.G.R.; Pogue, Vanessa; Skenes, Kevin; Yang, Chao-Han Huck; Melkote, Shreyes N.; Danyluk, S.

doi:10.1016/j.promfg.2016.08.108

Cited by 18 publications

(7 citation statements)

References 18 publications

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“…Yang et al [13] etched the silicon wafer by diamond wire saw slicing with HF/HNO3 solution, and the comparative analysis results of the trend of residual stress before and after etching showed that the maximum residual shear stress and average residual shear stress in the silicon wafer decreased after etching. Kumar et al [14] studied the maximum residual shear stress of the silicon wafer by diamond wire saw slicing at different growth rates, and detected the distribution of residual stress field inside the wafer through the near infrared transmission double-emission polarization method. The results showed that fast-growing wafer crystal had a large maximum residual shear stress.…”

Section: Introductionmentioning

confidence: 99%

The surface residual stress of monocrystalline silicon in ultrasonic vibration–assisted diamond wire sawing

Wang

Zhao²,

Li³

et al. 2022

Int J Adv Manuf Technol

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Monocrystalline silicon wafer is the most important raw material in chip manufacturing, wire sawing is the most common processing method of monocrystalline silicon wafer. The residual stress generated by cutting affects the subsequent polishing costs directly, as well as the fracture strength and mechanical integrity of the monocrystalline silicon wafer, thus affecting the service performance. In this paper, the generation mechanism of residual stress was analyzed based on diamond wire sawing technology. Then, based on D-P plastic constitutive model, the magnitude and distribution of residual stress of monocrystalline silicon chip under different process parameters were simulated by ABAQUS simulation software. Finally, the experiment of ultrasonic vibration assisted diamond wire sawing monocrystalline silicon and blind hole drilling method detection were conducted, the strain values before and after drilling in three directions were measured by strain gauge rosette, and the residual stress was calculated by combining with mathematical theory, and the experimental results verified the validity of the finite element model. The experimental results showed that residual compressive stress remains on the surface of silicon wafer in both conventional wire sawing and ultrasonic vibration assisted wire sawing. The residual compressive stress increases with the increase of the axial speed of wire saw, decreases with the increase of the wire saw feed speed, and fluctuates with the increase of the workpiece rotation speed. The residual compressive stress on the surface of the silicon wafer by ultrasonic vibration assisted wire sawing is larger than that by conventional wire sawing. The variation trend of simulation and experiment results is consistent, which provides theoretical support for the subsequent processing of monocrystalline silicon wafers.

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Section: Introductionmentioning

confidence: 99%

The surface residual stress of monocrystalline silicon in ultrasonic vibration–assisted diamond wire sawing

Wang

Zhao²,

Li³

et al. 2022

Int J Adv Manuf Technol

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“…Residual stress is the main factor leading to the warpage of as-sawn wafers. As a kind of internal stress, the residual stress is generated by the material removal, deformation, and uneven volume changes of the material [ 3 ]. For the process of diamond wire sawing, residual stress is induced by the interaction of elastic-plastic deformation, processing heat and phase transitions [ 4 ].…”

Section: Introductionmentioning

confidence: 99%

The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Liu

2021

Micromachines

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Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

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“…Residual stresses in these wafers negatively affect their mechanical behavior. 1,2 These residual stresses are created by both the solidification process by which ingots are produced and the wafering process. 3,4 The wafering process involves interaction of abrasive grits with the silicon material.…”

Section: Introductionmentioning

confidence: 99%

“…1,2 These residual stresses are created by both the solidification process by which ingots are produced and the wafering process. 3,4 The wafering process involves interaction of abrasive grits with the silicon material. [5][6][7] Depending on the condition of abrasives, the surfaces of these wafers frequently exhibit a mixture of ductile and brittle surface characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…17,18 One of the most recent developments has been the use of synchrotron x-ray micro-diffraction (lSXRD) as an accurate tool for examining the microstructure of the wafer and predicting crack development. [19][20][21] The use of birefringence with near-infrared (NIR) polariscopy as a tool for finding the in-plane residual stresses in PV silicon wafers has been discussed by several research groups 1,3,4,[22][23][24] and requires the knowledge of several physical parameters, including the wavelength of light used (k), the thickness of the sample (t), and the material stress-optic coefficient (C). 25,26 The stress-optic law relating all of these parameters is presented by Eq.…”

Section: Introductionmentioning

confidence: 99%

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Crystallographic Orientation Identification in Multicrystalline Silicon Wafers Using NIR Transmission Intensity

Skenes

Kumar

Prasath

et al. 2017

Journal of Elec Materi

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Near-infrared (NIR) polariscopy is a technique used for the non-destructive evaluation of the in-plane stresses in photovoltaic silicon wafers. Accurate evaluation of these stresses requires correct identification of the stress-optic coefficient, a material property which relates photoelastic parameters to physical stresses. The material stress-optic coefficient of silicon varies with crystallographic orientation. This variation poses a unique problem when measuring stresses in multicrystalline silicon (mc-Si) wafers. This paper concludes that the crystallographic orientation of silicon can be estimated by measuring the transmission of NIR light through the material. The transmission of NIR light through monocrystalline wafers of known orientation were compared with the transmission of NIR light through various grains in mc-Si wafers. X-ray diffraction was then used to verify the relationship by obtaining the crystallographic orientations of these assorted mc-Si grains. Variation of transmission intensity for different crystallographic orientations is further explained by using planar atomic density. The relationship between transmission intensity and planar atomic density appears to be linear.

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Effect of Growth Rate and Wafering on Residual Stress of Diamond Wire Sawn Silicon Wafers

Cited by 18 publications

References 18 publications

The surface residual stress of monocrystalline silicon in ultrasonic vibration–assisted diamond wire sawing

The surface residual stress of monocrystalline silicon in ultrasonic vibration–assisted diamond wire sawing

The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Crystallographic Orientation Identification in Multicrystalline Silicon Wafers Using NIR Transmission Intensity

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