Effect of growth conditions on the compositional homogeneity of Cd1 − x Zn x Te crystals

Гоник, М. А.; Gonik, M. M.; Tomson, A. S.

doi:10.1134/s0020168509100069

Cited by 1 publication

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High accuracy in maintaining preset thermal conditions of crystal growth, within 0.05-0.1°C, is ensured by the use of Agilent and National Instruments equipment and a multiloop digital PID controller system. The design and operation of the automatic system were described in greater detail previously [12].…”

Section: Methodsmentioning

confidence: 99%

“…Typically, the reason for this is that the growth front is strongly concave toward the melt, which is characteristic of the growth of multicomponent compounds by conventional techniques. The use of a sub merged heater [10] and the so called axial heat flux close to the phase interface (AHP) method [11,12] may ensure a convex growth front throughout the cross section of the crucible and create favorable conditions for single crystal growth.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth of bismuth and bismuth-antimony single crystals

Гоник

2015

Inorg Mater

Self Cite

View full text Add to dashboard Cite

Conditions have been identified that ensure unseeded growth of bismuth single crystals in air. The axial and radial (directed toward the crucible axis) temperature gradients necessary for the growth process, 40 and 6-7°C/cm, respectively, were produced using the axial heat flux close to the phase interface (AHP) method. In the preliminary stage of experiments, a single crystal ingot 40 mm in diameter and 60 mm in length has been obtained. Using a submerged heater that is used in the AHP method, we have developed an experimental procedure for measuring the curvature of the growth front directly in the crystal growth pro cess. The results demonstrate that, for both pure bismuth and a bismuth-antimony alloy, its shape is uniquely determined by the temperature profile along the hot boundary of the melt layer from which the crystal grows. Even at a small superheating, 0.5-1.5°C, of the periphery of the submerged heater relative to its center, the growth interface is convex toward the melt during growth.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%