Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm

The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

“…This is possible when the optimal epitaxial condition is applied [7]. The effect of interdiffusion at the interface, the segregation and desorption of indium (In) [8] and the impurity incorporation is suppressed at higher growth rates [9].…”

Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate

“…To achieve this, three main growth parameters, i.e. low growth temperature, high V/III ratio and high growth rate, have been identified [15][16][17][18][19]. However, in this work we shall present results from our growth studies by metal organic vapor-phase epitaxy (MOVPE) that extremely low growth rate at low temperature favored a high-quality QW with very smooth surface, in contradiction to previous reports [15,16].…”

Growth of laser diode structures with emission wavelength beyond 1100nm for yellow–green emission by frequency conversion

“…Due to the higher strain a single QW (SQW) was chosen (samples F and G). Because it was shown that a full strain compensation leads to the formation of dark spot defects up to misfit dislocations [15] a 6 nm In 0.39 Ga 0.61 As QW emitting at 1173 nm and embedded in GaAs was selected first (see Fig. 2).…”