Effect of growth condition on the electrical behavior of BiFeO₃/Si thin film devices

Effects of Oxygen Pressure on the Microstructures and Nanomechanical Properties of Samarium-Doped BiFeO3 Thin Films

“…While it was shown by Wang et al [9] that for a Sm-doped BFO film grown on SrTiO 3 substrates through PLD, higher substrate temperature can promote the doping of Sm into BFO films and effectively improve the ferroelectric characteristics of the resulting SmBFO films, a substrate temperature of up to 670 • C appears to be not feasible for glass substrates. Alternatively, SmBFO thin films deposited at a higher P O2 are expected to have a lower concentration of oxygen vacancies, which, in turn, should result in a significant suppression in leakage current and thus substantially enhanced ferroelectric properties [40]. Indeed, by using the Rutherford backscattering analysis, Panchasara et al had evidently confirmed that the oxygen content in the films was increased substantially when the P O2 was raised from 30 to 300 mTorr [40], suggesting that, in general, BFO films grown under higher P O2 environments result in a significant reduction in oxygen vacancies.…”

“…Alternatively, SmBFO thin films deposited at a higher P O2 are expected to have a lower concentration of oxygen vacancies, which, in turn, should result in a significant suppression in leakage current and thus substantially enhanced ferroelectric properties [40]. Indeed, by using the Rutherford backscattering analysis, Panchasara et al had evidently confirmed that the oxygen content in the films was increased substantially when the P O2 was raised from 30 to 300 mTorr [40], suggesting that, in general, BFO films grown under higher P O2 environments result in a significant reduction in oxygen vacancies. Moreover, the saturation polarization and coercive field of the BFO thin films were found to increase from 0.12 µC/cm 2 and 73 kV/cm to 1.5 µC/cm 2 and 184 kV/cm for BFO thin films grown at P O2 of 20 and 100 mTorr, respectively.…”

“…Moreover, the saturation polarization and coercive field of the BFO thin films were found to increase from 0.12 µC/cm 2 and 73 kV/cm to 1.5 µC/cm 2 and 184 kV/cm for BFO thin films grown at P O2 of 20 and 100 mTorr, respectively. By comparing the results of currentvoltage measurements, such enhancements in ferroelectric characteristics were attributed to the lowering of oxygen vacancy concentration and the improved space-charge-limited conduction transport mechanism across the film/substrate interfaces [40].…”