Effect of gaseous void on bipolar charge transport in layered polymer film

Lean, Meng H.; Chu, Wei-Ping L.

doi:10.1088/0022-3727/47/7/075303

Cited by 12 publications

(9 citation statements)

References 14 publications

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“…Channel charges and gate voltage relationship is required to find the channel electron concentration, which is expressed by (16) where is all the substrate charge present in the n-type substrate expressed by [10] (17)…”

Section: Electron Concentration In the Channelmentioning

confidence: 99%

Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors

Park¹,

Hahm²

2017

Journal of Sensor Science and Technology

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The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron concentration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain current is changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.

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Section: Electron Concentration In the Channelmentioning

confidence: 99%

Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors

Park¹,

Hahm²

2017

Journal of Sensor Science and Technology

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“…Bipolar charge transport models capable of handling leakage current up to prebreakdown levels have been successfully applied to layered polymer films [17][18][19]. Continuum charge transport models are not suited to simulate material with morphology, especially at the nanometer length scale.…”

Section: Current Simulation Effortsmentioning

confidence: 99%

“…This method requires only (≪ 2 ) calculations for a mesh of size ≪ . Following (17), the current density, J, can be similarly expressed as…”

Section: Matrix Algebra For Rapid Computation Andmentioning

confidence: 99%

Model for Charge Transport in Ferroelectric Nanocomposite Film

Lean¹,

Chu²

2015

Journal of Polymers

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This paper describes 3D particle-in-cell simulation of charge injection and transport through nanocomposite film comprised of ferroelectric ceramic nanofillers in an amorphous polymer matrix and/or semicrystalline ferroelectric polymer with varying degrees of crystallinity. The classical electrical double layer model for a monopolar core is extended to represent the nanofiller/nanocrystallite by replacing it with a dipolar core. Charge injection at the electrodes assumes metal-polymer Schottky emission at low to moderate fields and Fowler-Nordheim tunneling at high fields. Injected particles propagate via field-dependent Poole-Frenkel mobility. The simulation algorithm uses a boundary integral equation method for solution of the Poisson equation coupled with a second-order predictor-corrector scheme for robust time integration of the equations of motion. The stability criterion of the explicit algorithm conforms to the Courant-Friedrichs-Levy limit assuring robust and rapid convergence. Simulation results for BaTiO 3 nanofiller in amorphous polymer matrix and semicrystalline PVDF with varying degrees of crystallinity indicate that charge transport behavior depends on nanoparticle polarization with antiparallel orientation showing the highest conduction and therefore the lowest level of charge trapping in the interaction zone. Charge attachment to nanofillers and nanocrystallites increases with vol% loading or degree of crystallinity and saturates at 30-40 vol% for the set of simulation parameters.

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“…Commercial software has been used to compute effective permittivity of nanocomposites. 12,13 Several models of nanoparticles are discussed in the literature, including the Tanaka Multicore 3-layer and the Lewis models. 14 The classical electrical double layer (EDL) is similar to the Lewis model and is predicated on a monopole net charge for the core.…”

Section: Introductionmentioning

confidence: 99%

Simulation of bipolar charge transport in nanocomposite polymer films

Lean¹,

Chu²

2015

Journal of Applied Physics

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This paper describes 3D particle-in-cell simulation of bipolar charge injection and transport through nanocomposite film comprised of ferroelectric ceramic nanofillers in an amorphous polymer matrix. The classical electrical double layer (EDL) model for a monopolar core is extended (eEDL) to represent the nanofiller by replacing it with a dipolar core. Charge injection at the electrodes assumes metal-polymer Schottky emission at low to moderate fields and Fowler-Nordheim tunneling at high fields. Injected particles migrate via field-dependent Poole-Frenkel mobility and recombine with Monte Carlo selection. The simulation algorithm uses a boundary integral equation method for solution of the Poisson equation coupled with a second-order predictor-corrector scheme for robust time integration of the equations of motion. The stability criterion of the explicit algorithm conforms to the Courant-Friedrichs-Levy limit assuring robust and rapid convergence. The model is capable of simulating a wide dynamic range spanning leakage current to pre-breakdown. Simulation results for BaTiO 3 nanofiller in amorphous polymer matrix indicate that charge transport behavior depend on nanoparticle polarization with anti-parallel orientation showing the highest leakage conduction and therefore lowest level of charge trapping in the interaction zone. Charge recombination is also highest, at the cost of reduced leakage conduction charge. The eEDL model predicts the meandering pathways of charge particle trajectories. V C 2015 AIP Publishing LLC. [http://dx.

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Effect of gaseous void on bipolar charge transport in layered polymer film

Cited by 12 publications

References 14 publications

Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors

Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors

Model for Charge Transport in Ferroelectric Nanocomposite Film

Simulation of bipolar charge transport in nanocomposite polymer films

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