Effect of gas mixing on Xe ion currents from an ECR ion source

Abstract

Gas mixing technique has been used in order to increase the current of highly charged ions of Xe at the TIFR‐ECRIA. The He, N2, O2, Ne, and Ar are used as support gases, and their effect on output currents of Xe ions is studied. The effective ion charge and the total loss rate of ions are calculated from the measured currents. It is found that molecular gases, such as N2 and O2, exhibit better mixing effect in the enhancement of output of highly charged Xe ions. Furthermore, we describe this 14.5‐GHz ECR ion source mounted on a high voltage (400 kV) deck, with its four beamlines, as well as the control system for the remote operation.

Velocity and charge-state dependence on the Coulomb explosion of N2, under the impact of highly-charged ions at intermediate velocities

“…The experiment is performed at the electron cyclotron resonance-based ion accelerator (ECRIA) of Tata Institute of Fundamental Research, Mumbai [33,34]. Details of the experimental apparatus and the data acquisition system used in this experiment have been described elsewhere [35].…”

Study of proton capture resonant state of ^{15}O at 7556 keV

“…One of the most effective technique to produce targets which are isotopically pure and can withstand high beam load over a long time is implantation technique [11,12]. 14 N 3+ ions of energy 75 keV from the ECR (Electron Cyclotron Resonance) ion source of the low energy ion accelerator [13][14][15][16] at Tata Institute of Fundamental Research (TIFR), Mumbai, were implanted into 0.30(5) mm thick Ta backing. Tantalum (Ta) was chosen as the backing material due to its low sputtering rate, high saturation value than other materials like Au, Cu, etc.…”