Effect of Gamma Irradiation on Electrical Properties of CdTe/CdS Solar Cells

A High‐Detectivity, Fast‐Response, and Radiation‐Resistant TiN/CdZnTe Heterojunction Photodiode

“…[11][12][13][14][15][16] It is known that wide bandgap II-VI compound semiconductors possess a noticeably higher radiation resistance compared to their established commercially available counterparts Ge, Si, and III-V compounds. [17][18][19] For instance, the development of CdTe-base optoelectronic devices has been an active research field for years motivated by the demand for improved radiation hardness. [20][21][22][23] However, CdTe still exhibits only moderate radiation hardness that needs to be improved further to achieve reliable operation in harsh environments.…”

Enhancement of Electrical Parameters of Ni/n-GaN SBDs under Remote and not In-flux Gamma Irradiation

“…11,17,18 Gamma radiation causes damage to ionization in semiconductor materials and affects the electrical transport properties of these devices. [19][20][21] Gamma radiation has no nuclear energy loss component and the displacement damage caused by gamma-generated secondary electrons. The displaced electrons are mobile and pass through the transverse structure until they can be either recombined as vacancy-interstitial pairs.…”