Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001)

Gutakovsky, A.K.; Katkov, A. V.; Katkov, Mikhail; Pchelyakov, O. P.; Revenko, M. A.

doi:10.1016/s0022-0248(98)01328-1

Cited by 5 publications

(1 citation statement)

References 15 publications

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“…The final RHEED pattern of sample A did not show the fourth-order streak, presumably owing to denser APDs. This reminds us that the growth conditions must be carefully controlled in the epitaxy of a polar material on a nonpolar substrate [10][11][12][13].…”

Section: Mbe Growth Of Gaas On Sigementioning

confidence: 95%

Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

Usami

Azuma

Ujihara

et al. 2001

Semicond. Sci. Technol.

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A detailed study of molecular beam epitaxy of GaAs on homemade SiGe substrates has been performed. It was found that the initial migration-enhanced epitaxy process with As prelayer is crucial to obtain high-quality GaAs. By (004) x-ray diffraction, the lattice mismatch between GaAs and SiGe was demonstrated to be reduced compared with the conventional GaAs/Ge heterostructure. Furthermore, narrower halfwidth of the rocking curve and stronger photoluminescence intensity were found for GaAs on SiGe. These results show that SiGe is a promising material as an alternative substrate to Ge to realize exact lattice matching to GaAs for solar cell applications.

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Section: Mbe Growth Of Gaas On Sigementioning

confidence: 95%

Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

Usami

Azuma

Ujihara

et al. 2001

Semicond. Sci. Technol.

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SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications

Usami

Azuma

Ujihara

et al. 2000

Applied Physics Letters

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SiGe bulk crystal fabricated by a multicomponent zone-melting method was used as a substrate for epitaxial growth of GaAs. Compared with conventional GaAs/Ge heterostructure, the lattice mismatch of GaAs/Si0.022Ge0.978 was confirmed to be reduced by a decrease of the peak separation of (400) x-ray diffraction from the epitaxial GaAs layer and the substrate. Furthermore, the linewidth of the rocking curve of GaAs on SiGe was found to be narrower than that of GaAs on Ge. These results show that SiGe is promising material as an alternative substrate to Ge for realization of exactly lattice-matched GaAs/SiGe solar cells.

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X-ray investigation of thick epitaxial GaAs/InGaAs layers on Ge pseudosubstrates

Khan¹,

Mundboth²,

Stangl³

et al.

Proceedings of the IEEE Symposium on Emerging Technologies, 2005.

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Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001)

Cited by 5 publications

References 15 publications

Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications

X-ray investigation of thick epitaxial GaAs/InGaAs layers on Ge pseudosubstrates

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