Effect of Franz–Keldysh absorption on the short optical pulse generation in Transistor Laser

Ramya, R.; Piramasubramanian, S.

doi:10.1016/j.optcom.2020.126087

Cited by 4 publications

(1 citation statement)

References 21 publications

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“…Moreover, the transistor laser is operated under voltage modulation in addition to current modulation [4][5][6][7].The Franz-Keldysh (F-K) effect is the phenomenon in which the significant electric field causes additional photon absorption in the intrinsic collector-base region. This phenomenon occurs under the condition that, the emitted photon energy almost equals to the band gap energy of the reverse biased junction region [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Ramya,

Piramasubramanian,

Madhan

2023

Preprint

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Numerical analysis of a Transistor Laser is carried out to investigate the influence of Franz-Keldysh Effect on the non-linear distortion characteristics such as intermodulation (IM). The device considered for the study incorporates a GaAs absorber layer in the collector–base junction of a TL emitting around 980 nm. The base current threshold is obtained as 39 mA for the collector to base voltage of 1 V and it is discerned that the threshold current of TL is dependent on electric field in addition to the bias current. The analytical solution of rate equations at steady state is derived and compared with the numerical simulation and the same is plotted for VCB = 1 V. Moreover, maximum optical light output loss of 12 mW and 1.37 mA additional current is contributed to the collector current for collector base voltage of 3 V under various base currents due to F-K effect. The modulation bandwidth (f− 3dB) of TL under voltage modulation is obtained as 9.63 GHz while, under current modulation, it is found as 8.38 GHz respectively. A maximum modulation depth of 86% is obtained for IB=1.06Ith, at 2.4 GHz. The frequency components related to intermodulation product, IMD3 (2.15 GHz) magnitudes are obtained as − 10.26dBc, − 12.37 dBc, − 13.54 dBc and − 15.92 dBc for VCB voltage value of 0V, 1V, 2V and 3V respectively. The intermodulation product, IMD5 (2.05 GHz)magnitudes are obtained as − 18.89 dBc,−25.76 dBc, − 28.22 dBc and − 36.05 dBc for the collector bias voltage (VCB) value of 0V, 1V, 2V and 3V respectively.

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Section: Introductionmentioning

confidence: 99%

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Ramya,

Piramasubramanian,

Madhan

2023

Preprint

Self Cite

View full text Add to dashboard Cite

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Influence of Franz Keldysh effect on the modulation depth and distortion characteristics of transistor laser

Ramya,

Piramasubramanian,

Madhan

2024

Appl. Phys. B

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Dynamic performance analysis of lasing mode optical integrated device

Eladl¹,

Sharshar²,

Saad³

2022

SPQEO

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In this paper, the dynamic response of the optical gain of optical integrated device composed of a heterojunction bipolar transistor (HBT) and a laser diode (LD) has been numerically analyzed. This type of optical integrated device is called transistor laser (TL). First, the rate equation of LD has been solved to obtain its transfer function. Second, the overall transfer function of the whole structure has been analyzed numerically. The effect of HBT cutoff frequency on the amplitude and phase frequency response has been studied. The obtained results show that HBT has a strong influence on the device performance. In particular, higher values of HBT cutoff frequency result in lower amplitudes and higher phase values in the low-frequency range. The device is stable and has a fast response and high optical gain at higher frequencies. Therefore, it can be used as an optical amplifier or optical switch in high-speed optical systems.

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Effect of Franz–Keldysh absorption on the short optical pulse generation in Transistor Laser

Cited by 4 publications

References 21 publications

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Influence of Franz Keldysh effect on the modulation depth and distortion characteristics of transistor laser

Dynamic performance analysis of lasing mode optical integrated device

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