Effect of Film Thickness on Structural and Electrical Properties of Sputter-Deposited Nickel Oxide Films

Abstract

This work studies dependences of resistivity, carrier concentration, mobility and structural properties on the thickness of nickel oxide (NiO) films deposited onto glass substrates by RF magnetron sputtering in a pure oxygen atmosphere at an RF power 200 W. The electrical properties were measured by Hall Effect measurements. The X-ray diffraction (XRD) and transmission electron microscope (TEM) analyses of nickel oxide films indicates that these films are polycrystalline when the samples are prepared with an unheated substrate (T s ¼ 303 K) and using a substrate at a higher substrate temperature (T s ¼ 673 K). The thickness of the films varied in the range from 50 to 300 nm. The variations of the microstructural parameters, such as crystallite size (L), dislocation density (), stacking fault probability (), strain (") and density (D), with film thickness and substrate temperature were investigated. The results show the crystallite sizes increaser as the thickness of the film increases. The variation of the dislocation density and the stacking fault probabilities and strain decrease as the thickness increases. The resistivity of NiO film is increased with an increase in film thickness, which is related to the decrease of carrier concentration with film thickness. The NiO film with a thickness of 200 nm has a minimum resistivity of 0:69 Â 10 À2 m when deposited at substrate temperature of 303 K.

Dip coated nickel zinc oxide thin films: Structural, optical and magnetic investigations

“…In Fig, 1, first absorption band that is visible at 403 cm¯ related to the stretching vibrations of Ni-O bond of nickel oxide [15]. The peak at 505 cm -1 is due to ZnO [16] .The band which is recorded at 1110 cm¯ corresponds to the stretching vibrations of C-O-C [17]. The absorption bands located at 1401 cm -1 and 1642 cm −1 is due to the stretching vibration of C-O and C=O groups respectively 1 [17].…”

NiO Films Formed at Room Temperature for Microbolometer

“…Then, the 100 nm thickness of nickel oxide was deposited as a sensitive layer by reactive RF sputter at room temperature and then it was patterned by lift-off method (6). For the forming self-supporting structure of the micro-bridge, Si 3 N 4 and PI was removed by RIE and oxygen plasma asher, respectively (7,8). The fabricated micro-bolometer structure was inspected by using field emission scanning electron microscopy (FE-SEM).…”

“…The conductivities NiO Films Formed at Room Temperature for Microbolometer in nickel oxides are strongly dependent on microstructure defects of nickel oxides crystallites such as nickel vacancies and interstitial oxygen atoms. Furthermore, deposition conditions and environments generating microstructure distortion and non-stoichiometry are the main factors affecting the electrical conductivities in nickel oxides [8].…”

Characterization of Physical, Thermal and Spectral Properties of Biofield Treated 2,6-Dichlorophenol

“…Lalitha et al [23] and El-kadry et al [24] reported that a decrease in internal micro-strain in materials causes an increase in the crystallite size. Additionally, Chen et al elaborated that decrease in micro-strain leads to a reduction in inter-planar spacing and this minimizes the stacking fault probability in the materials [25]. Hence, it is assumed here that biofield energy treatment might cause a decrease in internal microstrain and this lead to a decrease in the inter-planar spacing and resultant increase in the crystallite size.…”