Effect of film thickness and temperature on the resistive switching characteristics of the Pt/HfO2/Al2O3/TiN structure

Liu, Yulin; Ouyang, Sha; Yang, Jie; Tang, Minghua; Wang, Wei; Li, Gang; Zou, Zhi; Liang, Yifan; Liu, Yucheng; Xiao, Yongguang; Chen, Qilai; Li, Zheng

doi:10.1016/j.sse.2020.107880

Cited by 16 publications

(13 citation statements)

References 30 publications

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“…Our results are backed by the experimental knowledge that the thickness of the switching layer and the presence of defects influence the resistive switching behavior in several metal-oxide-based structures. [24][25][26][27][28][29][30][31][32] The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/pssa.202200730. DOI: 10.1002/pssa.202200730…”

Section: Introductionmentioning

confidence: 99%

Understanding the Influence of Metal Oxide Layer Thickness and Defects on Resistive Switching Behavior Through Numerical Modeling

Dias

Ventura

2023

Physica Status Solidi (a)

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The resistive switching dynamics in metal–insulator–metal (MIM) structures may be explained through the formation and rupture of metallic filaments in the dielectric layer. Considerable research has been performed as an attempt to explain the microscopic origins of how regions that are originally insulating can change into conductors. Looking at how these conducting local regions are interconnected, the simulation of these localized switches can help understand how material properties such as thickness and defects influence the switching behavior and parameters. Here, the random circuit breaker (RCB) model is implemented and the dependence of the forming, Set, and Reset voltages on the oxide thickness and defect percentage is compared with experimental data. Only the forming voltage increases with the thickness, showing that, after the first step, the conductive filament formation and rupture occur only at a thinner thickness. It is observed that a higher percentage of initial conductive defects in the oxide layer promotes the forming step.

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Section: Introductionmentioning

confidence: 99%

Understanding the Influence of Metal Oxide Layer Thickness and Defects on Resistive Switching Behavior Through Numerical Modeling

Dias

Ventura

2023

Physica Status Solidi (a)

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“…The behavior of HfO x -based resistive switching devices at low temperatures is important, not only to know the switching capability and stability at low temperatures, but also to study the conduction mechanism in the high-k layer. Previous research often showed temperature measurements in order to address the conduction mechanisms of the samples studied [13,14], establish whether the devices show ohmic or hopping conduction, etc. A study conducted by Kumar Lata et al showed almost no resistance state temperature dependence at high temperatures (300-450 K) [15].…”

Section: Introductionmentioning

confidence: 99%

“…A study conducted by Kumar Lata et al showed almost no resistance state temperature dependence at high temperatures (300-450 K) [15]. Another study at high temperatures but in a small temperature range showed no definitive evidence for temperature dependence [13]. A relevant study performed by Walczyk et al [16] on HfO 2 devices in the 213-413 K range showed that LRS increased with temperature, whereas HRS decreased with rising T, meaning that the resistance ratio greatly reduced as the temperature grew.…”

Section: Introductionmentioning

confidence: 99%

Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

et al. 2021

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In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures.

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Section: Dependencia De La Conmutación Resistiva Con La Temperaturaunclassified

“…Repasando la investigación relacionada precedente, se puede observar que la realización de experimentos en temperatura es común con el objetivo de estudiar los mecanismos de conducción de las muestras MIM [177,178], por ejemplo, dilucidando si los dispositivos mostraban conducción óhmica o por hopping, etc. Además, distintos artículos han investigado el efecto de la temperatura en la conmutación resistiva a altas temperaturas (300-380 K) [177] (300-450 K) [179], mostrando bien nula o escasa dependencia de los estados resistivos con la temperatura en estos rangos. Sin embargo, estudiando estructuras MIM basadas en HfO 2 , Walczyk et al [180] demostraron experimentalmente que en el rango 213-413 K el LRS aumentaba en valor con el incremento de la temperatura, mientras que el valor del HRS disminuía, y por tanto, la ventana entre estados resistivos disminuía conforme aumentaba el valor de T. El mismo resultado fue observado por otros investigadores en los rangos 150-350 K [181] y 100-200 K [182].…”

Section: Dependencia De La Conmutación Resistiva Con La Temperaturaunclassified

Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

Vinuesa¹

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Como creo que es habitual para todo doctorando, esta tesis ha llegado a su fin gracias a muchas personas que, tanto dentro como fuera de la universidad, han contribuido a mi crecimiento como persona. A todas ellas les agradezco de corazón el camino recorrido juntos:En primer lugar a mis directores de tesis, el Dr. Salvador Dueñas y la Dra. Helena Castán, por su ofrecimiento y disposición a que formase parte de su grupo de investigación y realizase el doctorado con ellos. También debo darles las gracias por su cercanía e incansable amabilidad, siempre están dispuestos a ayudar de cualquiera de las formas. Creo sinceramente que hacen de la Universidad de Valladolid una mejor institución.A mi compañero de laboratorio, Óscar, por su infinita paciencia enseñándome a manejarme en el laboratorio, gracias a él he tenido siempre con quien conversar, y lo más importante, con quien quejarme, la experimentación ha sido siempre mas amena a su lado. Agradezco también al Dr. Héctor García su ayuda en el laboratorio, ya sea en forma de conocimiento o técnicas de experimentación, y al Dr. Benjamín Sahelices su caracter risueño y auxiliador.Si no fuera por la colaboración y comunicación constante con la

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Effect of film thickness and temperature on the resistive switching characteristics of the Pt/HfO2/Al2O3/TiN structure

Cited by 16 publications

References 30 publications

Understanding the Influence of Metal Oxide Layer Thickness and Defects on Resistive Switching Behavior Through Numerical Modeling

Understanding the Influence of Metal Oxide Layer Thickness and Defects on Resistive Switching Behavior Through Numerical Modeling

Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

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