Effect of Fe doping on magnetoresistance and exchange coupling of Fe-doped ITO films

Shen, Luhang; Ren, Yuan; Yang, Dongyan; Xing, Yaya; Sun, Genglin; Liu, Jiwen; An, Yukai

doi:10.1016/j.jallcom.2015.01.187

Cited by 5 publications

(2 citation statements)

References 29 publications

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“…The magnetoresistance is usually more important for ferromagnetic materials. Lately, work was done on ITO doped with ferromagnetic element [27]. We thought that measuring the magnetoresistance of pure ITO would be of interest for those working on doped-ITO, the values can be taken as references for comparison with ferromagnetic doped-ITO thin films.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Surface morphology, structural and electrical properties of RF-sputtered ITO thin films on Si substrates

et al. 2018

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Series of indium tin oxide (ITO) thin films were deposited onto Si(100) substrate by RF sputtering. The film thickness ranges from 61 to 768 nm. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) experiments were performed to study the structure and the surface morphology of these films. The electrical properties were obtained by a Hall effect measurement system; the electrical resistivity ρ, the carrier concentration n and the mobility μ were measured. Annealing experiments were carried out in the air at 400 • C for 60 min. The different physical parameters were investigated as a function of thickness before and after annealing. The effects of power and deposition rate were also addressed. We noted that the behaviour of some parameters with thickness is different before and after annealing. All these results are discussed and correlated in this article. Also, the results of the present ITO/Si system were compared to those of the ITO/glass, we have previously published.

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Section: Electrical Propertiesmentioning

confidence: 99%

Surface morphology, structural and electrical properties of RF-sputtered ITO thin films on Si substrates

et al. 2018

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“…Hence it is important to understand the magnetic, charge carrier transport as well as optical properties of the magnetic In 2 O 3 (DMS) thin films. Among various transition metal doped In 2 O 3 thin films, Fe doped In 2 O 3 thin film is of great interest due to its good electrical conductivity, high optical transparency and high solubility of Fe element in the In 2 O 3 lattice and Fe as a magnetic dopant due to its (Fe 3+ ) superior magnetic moment among 3d transition metals ions [23,24]. High conductivity in the host material comes from the availability of large charge carrier density and high mobility of the carriers in the In 2 O 3 [25].…”

Section: Introductionmentioning

confidence: 99%