Effect of fatigue fracture on the resistive switching of TiO 2 -CuO film/ITO flexible memory device

Li, Jian‐Chang; Chen, Bin; Qian, Yu

doi:10.1016/j.cap.2018.05.009

Cited by 24 publications

(18 citation statements)

References 41 publications

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“…Meanwhile, the low-density dislocation is impeded by the grain boundary and piles up against the boundary, resulting in a continuous increase of the grain boundary energy. [13] As the bending times increase, the stress concentration occurs at the tip of the cracks caused by the break of grain boundary and the fracture process leads to the energy release (see Figure 5c). The mircocracks propagate along the grain boundary as the cohesive zone strength inside the grain is substantially higher than that of the grain boundary.…”

Section: Resultsmentioning

confidence: 99%

“…[12] Our previous works indicated mircocracks in the interfaces cause branch breakage of the conductive filament and thus decline the density of the oxygen vacancies, resulting in the decrease of ON/OFF ratio. [13,14] In addition, the different stacking orders of the thin film can affect the fatigue life of the flexible RS devices. For example, Zheng et al reported that BiFeO3/ZnO interface hinders the recombination of electron-hole pairs, resulting in enhanced tolerance and a high ON/OFF ratio.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Fatigue Fracture on Resistive Switching of ZnO and NiO Stacking Films

et al. 2022

Physica Rapid Research Ltrs

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The ZnO and NiO stacking films are prepared by sol–gel spin‐coating method to explore the impact of bending on device resistive switching. Compared with others, the device with NiO/ZnO/NiO/indium tin oxide/PET stacking structure exhibits a higher ON/OFF ratio. After bending 1000 times, the switching performance is reduced by two orders of magnitude due to the branch breakage of the conductive filaments. The finite element studies indicate that stress mutation between the ZnO and NiO functional layers leads to microcrack formation and interfacial delamination, increasing the interfacial barrier and depletion width. The cracks propagate along the grain boundary and thus result in more traps, which may act as electron blocking layers to restrict the carrier transport. The scanning electron microscopy observation shows that when the crack density increases to about 0.03 μm−1, the device is broken down. Under threshold bending cycles as simulated by Comsol Multiphysics, the grain boundary is completely torn leading to fatigue fracture. The proposed work provides some information for improving the flexibility of memory devices.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Fatigue Fracture on Resistive Switching of ZnO and NiO Stacking Films

et al. 2022

Physica Rapid Research Ltrs

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“…to the induced number of cracks upon applied stress. Li et al [40] have experimentally demonstrated that the interfacial cracks are formed after bending between the ITO and active layer (TiO 2 in their case) due to different elastic modules. This delamination between active layer and ITO happens along the interfacial direction due to poor adhesion between ITO and the active layer.…”

Section: Resultsmentioning

confidence: 99%

“…However, we believe that the decrease in the conduction after bending effects the impact ionization during electrical breakdown which results in an increased V BR . [40] It is reported that metal work function (φ) decreases under the mechanical stress. [41,42] Also, oxygen in air can easily permeates through films along micro-cracks and accelerate the oxidation process, thus reduces the local depletion width.…”

Section: Resultsmentioning

confidence: 99%

Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications

Aziz

Kim

Rehman

et al. 2021

Adv Elect Materials

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Transparent and flexible diodes could be useful for future transparent electronics. Here such diodes are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates. The three‐layered structure shows rectifying characteristics with low breakdown voltage originated from the Schottky barrier at the W/ZnO (0.8 eV) and the ZnO/ITO (0.1 eV) interfaces. Mechanical endurance is retained after different bending strengths and the rectification ratio is showed stability for 104 cycles without any significant degradation. Steep slope transistors are designed by implementing such diodes in series with the conventional field effect transistors. Such diode plus transistor stack enables field effect transistors with steep subthreshold swing of < 5.2 mV dec−1 and an internal current amplification due to negative differential resistance induces across the Schottky diodes during the EBR. Also, one diode‐one resistor structure is successfully demonstrated by connecting the flexible diodes and resistive memory in series for applications in high density integrated non‐volatile memory applications.

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“…When the device is bent, the ITO electrode becomes strongly stressed, and as the bending radius of the device decreases, a few cracks start to appear in the ITO 35 . The crack density of the ITO increases with decreasing bending radius, resulting in increased resistance 36 . Therefore, the programming and the erasing voltages decrease with decreasing radius of curvature (bending radius) of the device, and the current varies as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Highly flexible and stable resistive switching devices based on WS2 nanosheets:poly(methylmethacrylate) nanocomposites

Lee

Sung

et al. 2019

Sci Rep

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This paper reports data for the electrical characteristics and the operating mechanisms of flexible resistive switching devices based on WS2 nanosheets (NSs) dispersed in a poly(methyl methacrylate) (PMMA) layer. The ON/OFF ratio of the memristive device based on an Al/WS2 NSs:PMMA/indium tin oxides (ITO) structure was approximately 5.9 × 104. The memristive device based on the WS2 NSs also exhibited the bipolar switching characteristics with low power consumption and great performance in the bent state with radii of the curvatures of 20 and 10 mm. Especially, the results obtained after bending the device were similar to those observed before bending. The device showed nearly the same ON/OFF ratio for a retention time of 1 × 104 sec, and the number of endurance cycles was greater than 1 × 102. The set voltage and the reset voltage probability distributions for the setting and the resetting processes indicated bipolar switching characteristics. The operating and the carrier transport mechanisms of the Al/WS2 NSs:PMMA/ITO device could be explained based on the current-voltage results with the aid of an energy band diagram.

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Effect of fatigue fracture on the resistive switching of TiO 2 -CuO film/ITO flexible memory device

Cited by 24 publications

References 41 publications

Effect of Fatigue Fracture on Resistive Switching of ZnO and NiO Stacking Films

Effect of Fatigue Fracture on Resistive Switching of ZnO and NiO Stacking Films

Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications

Highly flexible and stable resistive switching devices based on WS2 nanosheets:poly(methylmethacrylate) nanocomposites

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