Effect of fast annealing on the electrical properties of SiO2/Si structures with thin layers of anodic silicon oxide

Baranov, I. L.; Tabulina, L. V.; Stanovaya, L. S.; Rusal’skaya, T. G.

doi:10.1134/s1063782606080100

Cited by 2 publications

(1 citation statement)

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“…This complexity in the VLSI circuit gives rise to RC delay, which is a great hindrance in the speed performance of the devices. Intensive research is going on to reduce delay by realizing lower dielectric constant material (k ~ 2-3⋅5) (Kal et al 1995;Ma et al 1998;Morgen et al 2000;Maex et al 2003;Baranov et al 2006;Wang et al 2006;Joshi and Mahajan 2008) for interlayer dielectric instead of conventional SiO 2 used in microelectronics (Vexler et al 2006). According to the International Technology Roadmap for Semiconductors (ITRS) (www.itrs.net 2007), it is required to integrate dielectric materials with effective k values between 2⋅3 and 2⋅6, so the problem of cross-talk and power dissipation can be minimized to a large extent.…”

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confidence: 99%

Growth and characterization of MMA/SiO2 hybrid low-k thin films for interlayer dielectric applications

Joshi

Mahajan

2010

Bull Mater Sci

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The methylmethacrylate (MMA) incorporated SiO 2 thin films having low dielectric constant (k = 2⋅97) were deposited successfully to realize new interlayer material for the enhancement of electrical performance of on-chip wiring in very large scale integrated (VLSI) circuits. We have successfully incorporated MMA monomer and eliminated the polymerization step to lower the dielectric constant of deposited thin film. The presence of peak of C=C bond in Fourier transform infrared (FTIR) spectra and carbon peak in energy dispersive (EDAX) spectra confirms the incorporation of carbon in the film due to MMA. The concentration of MMA has great impact on the peak area and full width at half maxima (FWHM) of the Si-O-Si bond, which decreases the density by low atomic weight elements and consequently decreases the dielectric constant. The surface morphology analysed by scanning electron microscopic (SEM) image shows excellent uniformity of the film. The refractive index of 1⋅31 was measured by ellipsometer for 0⋅5 ml MMA concentration film. These deposited thin films having low refractive index and dielectric constant are widely applicable for the optical interconnects and interlayer applications in integrated optical circuits and VLSI circuits.

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