Effect of fabrication process on the microstructure and the efficiency of organic light-emitting diode

Lin, Wei–Chun; Lin, Yao; Wang, Wei-Ben; Yu, Bang-Ying; Iida, Shin‐ichi; Tozu, Miyako; Hsu, Ming-Hung; Jou, Jwo‐Huei; Shyue, Jing‐Jong

doi:10.1016/j.orgel.2009.01.013

Cited by 32 publications

(29 citation statements)

References 21 publications

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“…Throughout the study of these cluster ion sources, buckminsterfullerene (C 60 + ) has received significant attention since it became a commercially available product in 2003 . Using surface analysis techniques and C 60 + ion sputtering, biological/medical and organic electronic materials have been widely studied.…”

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confidence: 99%

“…This was feasible because the auxiliary Ar + beam could suppress the carbon deposition and/or remove graphitized materials through the removal of the top surface . To date, this co‐sputtering technique has only been used as a slicing tool that removes the outermost surface, while the newly exposed surface is analyzed using other means (namely, X‐ray photoelectron spectrometry and scanning probe microscopy). In previous studies, the sputtered materials were not analyzed, making it unclear how the auxiliary Ar + beam affected the mass distribution of secondary ions and whether the co‐sputtering technique could serve as an ionization source for the dynamic SIMS (D‐SIMS) analysis of organic materials.…”

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confidence: 99%

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Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C₆₀⁺ and Ar⁺

You

Chang

Lin

et al. 2011

Rapid Comm Mass Spectrometry

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Dynamic secondary ion mass spectrometry (D-SIMS) analysis of poly(ethylene terephthalate) (PET) and poly(methyl methacrylate) (PMMA) was conducted using a quadrupole mass analyzer with various combinations of continuous C(60)(+) and Ar(+) ion sputtering. Individually, the Ar(+) beam failed to generate fragments above m/z 200, and the C(60)(+) beam generated molecular fragments of m/z ~1000. By combining the two beams, the auxiliary Ar(+) beam, which is proposed to suppress carbon deposition due to C(60)(+) bombardment and/or remove graphitized polymer, the sputtering range of the C(60)(+) beam is extended. Another advantage of this technique is that the high sputtering rate and associated high molecular ion intensity of the C(60)(+) beam generate adequate high-mass fragments that mask the damage from the Ar(+) beam. As a result, fragments at m/z ~900 can be clearly observed. As a depth-profiling tool, the single C(60)(+) beam cannot reach a steady state for either PET or PMMA at high ion fluence, and the intensity of the molecular fragments produced by the beam decreases with increasing C(60)(+) fluence. As a result, the single C(60)(+) beam is suitable for profiling surface layers with limited thickness. With C(60)(+)-Ar(+) co-sputtering, although the initial drop in intensity is more significant than with single C(60)(+) ionization because of the damage introduced by the auxiliary Ar(+), the intensity levels indicate that a more steady-state process can be achieved. In addition, the secondary ion intensity at high fluence is higher with co-sputtering. As a result, the sputtered depth is enhanced with co-sputtering and the technique is suitable for profiling thick layers. Furthermore, co-sputtering yields a smoother surface than single C(60)(+) sputtering.

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confidence: 99%

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C₆₀⁺ and Ar⁺

You

Chang

Lin

et al. 2011

Rapid Comm Mass Spectrometry

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“…Solution process is highly regarded as the lowest-cost way to fabricate such devices, because it could spincoat homogeneous and uniform layers with large area and, moreover, devices fabricated by this method exhibit as excellent performance as those prepared by vapor-deposition method [2]. Indeed, there have been some reports on solution-processed small-molecule OLEDs [3][4][5][6] and our group also has done much research on solution-processed OLEDs of small-molecule mixed-host structures [7][8][9][10][11][12][13].…”

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A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

et al. 2015

Thin Solid Films

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“…On the basis of calculations for a single angle of incidence, we predict that sample rotation at 70 will also help experiments using Au 3 and large Ar cluster beams. [6] C 60 and low energy Ar co-bombardment An intriguing set of experiments from Shyue et al [4,5,[9][10][11][12][13][14][15] shows promise of assisting depth profiles by co-bombardment of the system with C 60 and low energy Ar ions. This strategy for eroding samples has, as yet, only been implemented by one research group because most SIMS instruments with C 60 ion beams do not also have a low energy Ar ion beam.…”

Section: Introductionmentioning

confidence: 99%

Modeling dynamic cluster SIMS experiments

Garrison

Schiffer

Kennedy

et al. 2012

Surface & Interface Analysis

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The underpinnings of two SIMS experimental findings are elucidated using the power of molecular dynamics to provide insight at the molecular level. First, the improvement of depth resolution for C 60 bombardment of Irganox delta layers and polymer layers using sample rotation is explained by molecular dynamics simulations of the repetitive bombardment of Ag surfaces with 20 keV Au 3 , C 60 , and Ar 872 at grazing angles of incidence with both single azimuthal angle and random azimuthal angles. Single azimuthal angle simulations at grazing angles show the formation of trenches and valleys parallel to the cluster beam form and are elongated with increasing incident angle. Cluster bombardment simulations with random azimuthal angles mimic sample rotation and show that under grazing angles of incidence, the surface is smoother because of the random impact angles preventing trench and valley formation. Second, depth profiles using C 60 at a 70 angle of incidence have been improved by co-bombardment with low energy Ar ions emitted at 33 from the C 60 beam and at a 45 incident angle from the surface. Molecular dynamics simulations of the bombardment of solid benzene with low energy Ar and 15 keV C 60 were used to show the depth of damage created during bombardment. For low kinetic energy (<200 eV), the damage caused by the Ar atom is in the same region as for the C 60 cluster. It is believed that for the experimental conditions used during co-bombardment, the Ar beam is breaking up the ridges created by the grazing C 60 beam.

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Effect of fabrication process on the microstructure and the efficiency of organic light-emitting diode

Cited by 32 publications

References 21 publications

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C₆₀⁺ and Ar⁺

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C₆₀⁺ and Ar⁺

A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

Modeling dynamic cluster SIMS experiments

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Effect of fabrication process on the microstructure and the efficiency of organic light-emitting diode

Cited by 32 publications

References 21 publications

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C60+ and Ar+

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C60+ and Ar+

A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

Modeling dynamic cluster SIMS experiments

Contact Info

Product

Resources

About

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C₆₀⁺ and Ar⁺

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C₆₀⁺ and Ar⁺