Effect of etching time and illumination on optical properties of SiNWs elaborated by Metal Assisted Chemical Etching (MACE) for organic photovoltaic applications

Saidi, Hamza; Hidouri, Tarek; Fraj, Ibtissem; Saidi, F.; Bouazizi, Abdelaziz

doi:10.1016/j.spmi.2015.07.012

Cited by 14 publications

(5 citation statements)

References 32 publications

(12 reference statements)

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“…In this work, Czochralski (Cz) n-type silicon wafers (001) oriented were used. The silicon nanowires were prepared using two-step MACE, as indicated in our last work [25]. The optimised etching time under illumination was 60 min.…”

Section: Methodsmentioning

confidence: 99%

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Investigation of the SiNWs concentration and annealing effects on the structural, morphological and optical properties of P3HT: SiNWs nanocomposite

Saidi

Hidouri

Amri

et al. 2020

Adv. Nat. Sci: Nanosci. Nanotechnol.

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Silicon nanowires (SiNWs), with different ratios, have been elaborated by metal assisted chemical etching (MACE) on P3HT:SiNWs blends, deposited onto PET substrate. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and hotoluminescence (PL) measurements have been used to control the structural, morphological and optical properties of the investigated structure. The best concentration chosen is followed by an annealing treatment. Our results prove that the optimal structure is obtained with the nanocomposite P3HT:SiNWs (1:1). The moderate annealing temperature, around 90 °C, is most appropriate. A correlation between XRD, AFM and PL measurements can explain the decrease of charge transfer and the coupled of SiNWs with increasing concentration. Our results can improve the possibility to integrate those kinds of structures as an active layer in the photovoltaic applications.

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Section: Methodsmentioning

confidence: 99%

“…In this experiment, the illumination level and etching time described in the experimental part are fixed. P3HT film was deposited directly onto the n-type silicon substrate (001) [25]. In this paper, optimised SiNWs are detached from Si substrate via an ultrasonic treatment and mixed, at different concentrations, with P3HT solution.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the SiNWs concentration and annealing effects on the structural, morphological and optical properties of P3HT: SiNWs nanocomposite

Saidi

Hidouri

Amri

et al. 2020

Adv. Nat. Sci: Nanosci. Nanotechnol.

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“…На сьогодні велика кількість статей присвячена впливу технологічних параметрів синтезу на розміри КНН [12][13][14]. Однак для ефективного використання даних наноструктур у складі сенсорів певних фізичних чи хімічних величин бракує дослідження впливу планарної і вертикальної морфології масиву кремнієвих нанониток на параметри сенсорів на їх основі.…”

Section: вступunclassified

Investigation of the Influence of Silicon Nanowire Synthesis Parameters on the Characteristics of Photosensitive Sensors

Linevych,

Koval,

Dusheyko

et al. 2023

Bull. Kyiv Polytech. Inst. Ser. Instrum. Mak.

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Problem. Photosensitive sensors are widely used both in everyday life in climate systems and in communication devices and street lighting. In order to improve the performance parameters of photosensitive sensors, the use of silicon nanowires (SiNWs) has been proposed. A large number of articles are dedicated to the influence of synthesis parameters on the dimensions of SiNWs. However, there is a lack of research on the impact of the surface morphology of SiNW arrays on the electrical and photosensitive parameters of sensors based on them.The purpose of the work The aim of this work is to synthesize silicon nanowires using the metal-assisted chemical etching method, investigate their surface morphology, and fabricate photodiodes based on them to examine the influence of SiNW synthesis parameters on the characteristics of photosensitive sensors, considering the peculiarities of their structure.Research results. Photosensitive sensors of diode type based on SiNWs were synthesized and investigated. The influence of the following synthesis parameters of SiNWs on their lateral and vertical morphology as well as on characteristics of diode sensors based on them was demonstrated: the duration of the first and second stages of metal-assisted chemical etching (MACE), the content of silver nitride and hydrogen peroxide in the solutions of the first and second stages of MACE, as well as surface texturing and processing in isotropic and anisotropic etchants. The maximum operational parameters of the obtained photosensitivity sensors based on the SiNW array were as follows: rectification coefficient of 1320 and photosensitivity coefficient of 3.1 mA/lmV.Conclusions. The obtained results indicate that the technological parameters of the first and second stages of MACE, as well as pre- and post- chemical treatments, have a significant influence on increasing of the surface roughness, height, and porosity of SiNWs, which in turn affect the electric and photosensitive parameters of the sensors. Optimal SiNWs synthesis parameters for achieving of maximum photosensitivity have been established.

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“…Due the large area of the possibilities offered by this technique, it has been intensively studied over the last years. Indeed, some works reported the effect of etching time and illumination on the SiNWs properties [21], the impact of the doping level on the MACE [22] and the influence of pre-surface treatment on the morphology of SiNWs formation [23].…”

Section: Introductionmentioning

confidence: 99%

“…MACE was also utilized to synthetize one-dimensional silicon nanowires with porous structures [24,25]. Other studies have assessed the effect of the size of metal catalyst particles on the fabrication of silicon nanowires [21]. Else reported the effect of wafer resistivity effect on SiNWs formation [26,27].…”

Section: Introductionmentioning

confidence: 99%

Temperature Etching and Metallic Agent Concentration Effect on Structure, Morphology and Wettability of Silicon Nanowires

Lamrani,

Hadjersi,

Amirouche

et al. 2024

JNanoR

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Abstract. Structural, Morphologycal and Wettability of SiliconNanowires (SiNWs) elaborated using Ag assisted electroless chemical etching are investigated. Prior the etching, Ag nanoparticles (AgNPs) were deposited at room temperature in a HF/AgNO3 solution with different concentration of AgNO3. The XRD spectra of the Ag NPs deposit show a good crystallinity. The effects of temperature etching bath and concentrations of AgNO3 on the etching process were examined. The morphological study, performed using a Scanning Electron Microscopy (SEM), shows porous silicon layer of 2µm for the lower temperature etching. For 25°C, perpendicular silicon nanowires about 15µm were formed. For the higher etching temperature (50°C), the silicon nanowire about 50 nm in diameter and 50µm in length were formed. The impact of Ag concentration on the SiNWs formation is examined in the second part of the present work. It is shown that the etching depth decreases as the Ag concentration decreases with values of 2.8 μm and 2 μm for concentrations of 0.025M and 0.0125M, respectively. The hydrophobicity of the samples was monitored by measuring the contact angle between a drop of water and the sample surface. It was established that the morphology is strongly influenced by etching conditions and their wettability changes from superhydrophilic to hydrophobic. FTIR analysis confirms the oxide-free silicon nanowires.

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Effect of etching time and illumination on optical properties of SiNWs elaborated by Metal Assisted Chemical Etching (MACE) for organic photovoltaic applications

Cited by 14 publications

References 32 publications

Investigation of the SiNWs concentration and annealing effects on the structural, morphological and optical properties of P3HT: SiNWs nanocomposite

Investigation of the SiNWs concentration and annealing effects on the structural, morphological and optical properties of P3HT: SiNWs nanocomposite

Investigation of the Influence of Silicon Nanowire Synthesis Parameters on the Characteristics of Photosensitive Sensors

Temperature Etching and Metallic Agent Concentration Effect on Structure, Morphology and Wettability of Silicon Nanowires

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