Effect of Electron Irradiation on 1700V 4H-SiC MOSFET Characteristics

Popelka, Stanislav; Hazdra, P.

doi:10.4028/www.scientific.net/msf.858.856

Cited by 9 publications

(5 citation statements)

References 7 publications

(12 reference statements)

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“…The aim of this article is to compare radiation resistance of state‐of‐the‐art active power switches based SiC and GaN technologies to the total ionization dose (TID). Recent progress in development of SiC/oxide interface allowed appearance of SiC high voltage power MOSFETs on the commercial market and the first study of their radiation hardness followed soon . Workhorses of the GaN technology are high‐electron‐mobility transistors (HEMTs).…”

Section: Introductionsupporting

confidence: 89%

Radiation resistance of wide-bandgap semiconductor power transistors

Hazdra

Popelka

2016

Phys. Status Solidi A

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Radiation resistance of state‐of‐the‐art commercial wide‐bandgap power transistors, 1700 V 4H‐SiC power MOSFETs and 200 V GaN HEMTs, to the total ionization dose was investigated. Transistors were irradiated with 4.5 MeV electrons with doses up to 2000 kGy. Electrical characteristics and introduced defects were characterized by current–voltage (I–V), capacitance–voltage (C–V), and deep level transient spectroscopy (DLTS) measurements. Results show that already low doses of 4.5 MeV electrons (>1 kGy) cause a significant decrease in threshold voltage of SiC MOSFETs due to embedding of the positive charge into the gate oxide. On the other hand, other parameters like the ON‐state resistance are nearly unchanged up to the dose of 20 kGy. At 200 kGy, the threshold voltage returns back close to its original value, however, the ON‐state resistance increases and transconductance is lowered. This effect is caused by radiation defects introduced into the low‐doped drift region which decrease electron concentration and mobility. GaN HEMTs exhibit significantly higher radiation resistance. They keep within the datasheet specification up to doses of 2000 kGy. Absence of dielectric layer beneath the gate and high concentration of carriers in the two dimensional electron gas channel are the reasons of higher radiation resistance of GaN HEMTs. Their degradation then occurs at much higher doses due to electron mobility degradation.

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Section: Introductionsupporting

confidence: 89%

Radiation resistance of wide-bandgap semiconductor power transistors

Hazdra

Popelka

2016

Phys. Status Solidi A

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“…But displacement effect of irradiation on the devices is rarely reported. The effect of electron irradiation on commercial power MOSFET has been investigated [7], [8]. When electron dose reaches 200 kGy, the ON-state resistance increases.…”

Section: Introductionmentioning

confidence: 99%

Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics

Zhang

Tang

et al. 2020

IEEE Access

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The effects of 5 MeV proton irradiation on ON-state characteristics of 1200 V 4H-SiC VDMOSFETs are investigated in this paper, and related mechanisms have been revealed by the analysis of their test structure of ohmic contacts, lateral nMOSFETs and MOS capacitors simultaneously fabricated on same wafer. The results show that the threshold voltage (VTH) decreases obviously with increasing irradiation doses because the dominant hole traps induced by nitrogen passivation might capture more holes produced by the ionization effect of proton irradiation, resulting in the generation of net positive charges nearby the SiO2/4H-SiC interface. The interface trap density (Dit) extracted by subthreshold swing increases but field effective mobility (μFE) is improved with increasing irradiation doses. The un-trapped near interface electron traps (NIETs) are reduced by the ionization effect of proton irradiation, which could be beneficial to the improvement of μFE. And after the maximum irradiation dose of 1×10 14 p/cm 2 the VDMOSFET fails in the ON-state capability. Before it fails, the ON-state resistivity (RON) firstly decreases and then increases with the increase of irradiation dose. The deterioration of the resistance of lightly doped drift region (RD) and the resistance of JFET region (RJFET) caused by the displacement effect of proton irradiation covers up the improvement of the channel resistance (RCH) with increasing irradiation doses, finally leading to the failure of the VDMOSFET at the maximum proton irradiation dose. INDEX TERMS 4H-SiC power MOSFETs, mobility, ON-state characteristics, proton irradiation, SiO2/SiC interface.

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“…A considerable number of studies have been devoted to the effect of electron irradiation on the parameters of SiC MOSFETs [8][9][10][11]. As shown in [10], some decrease in the threshold field is observed at very small doses of ∼1 kGy.…”

Section: Introductionmentioning

confidence: 99%

“…The effect of irradiation with protons having energies of 180 keV to 10 MeV with doses in the range from 5×10 11 to 5×10 14 cm −2 on the parameters of SiC MOSFETs was examined in [9,12,13]. However, only lateral MOSFETs with relatively large gate lengths of L=12 and 24 μm were analyzed in these studies.…”

Section: Introductionmentioning

confidence: 99%

Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

Lebedev

Kozlovski

Levinshteǐn

et al. 2019

Semicond. Sci. Technol.

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The effect of irradiation with 15 MeV protons on the electrical properties of high-power vertical 4H-SiC MOSFETs of 1.2 kV class has been studied experimentally with doses in the range 0Φ10 14 cm −2 . Dose Φ cr , signifying the complete degradation of the device, corresponds to the condition Φ cr ≈n 0 /η e (η e is the electron removal rate and n 0 is the electron concentration in the unirradiated drift layer). In the devices under study, Φ cr is 10 14 cm −2 . The effect of irradiation on the leakage current, gate-drain capacitance, transconductance, and field mobility was examined.

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Effect of Electron Irradiation on 1700V 4H-SiC MOSFET Characteristics

Cited by 9 publications

References 7 publications

Radiation resistance of wide-bandgap semiconductor power transistors

Radiation resistance of wide-bandgap semiconductor power transistors

Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics

Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

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