Effect of electron beam on structural, linear and nonlinear properties of nanostructured Fluorine doped ZnO thin films

Antony, Albin; Pramodini, S.; Kityk, I.V.; Abd‐Lefdil, M.; Douayar, A.; Moursli, Fouzia Cherkaoui El; Sanjeev, Ganesh; Manjunatha, K.; Poornesh, P.

doi:10.1016/j.physe.2017.08.015

Cited by 22 publications

(4 citation statements)

References 32 publications

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“…The deposition time and other spray parameters were kept fixed in order to maintain a uniform thickness (~310 nm) of the studied films. The experimental procedures and spray parameters followed for the deposition of Cu:ZnO thin films is reported elsewhere [21].…”

Section: Methodsmentioning

confidence: 99%

X-ray photoelectron spectroscopy, Raman and photoluminescence studies on formation of defects in Cu:ZnO thin films and its role in nonlinear optical features

Antony¹,

Poornesh

Kityk

et al. 2018

Laser Phys.

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The structural, optical, morphological and nonlinear optical properties of Cu:ZnO spraycoated films are studied. The surface morphology of Cu:ZnO thin films turned out to be homogenous, crack free and well covered with pea-shaped grains. The peak shift observed in the xray photoelectron spectroscopy spectra of the Cu:ZnO thin films infers the defect states present in the films. The satellite peak observed at 939.9 eV for Cu2P core-level spectra confirms the +2 oxidation state of Cu in the films. The formation of additional defect levels in the nanostruc-tures upon Cu doping was investigated using photoluminescence (PL) and Raman spectroscopy studies. The luminescent centers in the violet, blue and green spectral region were observed. The most prominent emission was centered at the blue color center for 5% Cu:ZnO thin films. The enhancement in the PL emission intensity confirms the increase in the defect state density upon Cu doping. The shifting of the UV emission peak to the visible region validates the increase in the nonradiative recombination process in the films upon doping. The phonon modes observed in Raman analysis around 439, 333 and 558 cm −1 confirm the improvement in the crystallinity and formation of defect states in the films. X-ray diffraction reveals that the deposited films are of single-phase wurtzite ZnO structure with preferential growth orientation parallel (0 0 2) to the C-axis. The thirdorder optical susceptibility χ(3) has been increased from 3.5 × 10 −4 to 2.77 × 10 −3 esu due to the enhancement of electronic transition to different defect levels formed in the films and through local heating effects arising due to continuous wave laser illumination. The enhanced third harmonic generation signal investigated using a Nd:YAG laser at 1064 nm and 8 ns pulse width shows the credibility of Cu:ZnO films in frequency tripling applications.

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Section: Methodsmentioning

confidence: 99%

X-ray photoelectron spectroscopy, Raman and photoluminescence studies on formation of defects in Cu:ZnO thin films and its role in nonlinear optical features

Antony¹,

Poornesh

Kityk

et al. 2018

Laser Phys.

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“…As seen in the table (1), the increase in the content of graphene caused both the linear and nonlinear optical susceptibilities to vary from 0.550 to 0.65, and from (1.56 x10 -11 ) to (1.73 x10 -11 ) esu, respectively. Which is a large variation when compared with that of other materials [38][39][40][41] such as the Pure ZnO (0.117, 0.313 x 10 -13 esu), Co-ZnO (0.13-0.2, 0.489-2.72 x10 -13 esu), and Sn-ZnO (1-0.85, 0.5-9 x10 -11 esu). The same thing was observed for the nonlinear refractive index, which varied from 2.086 to 2.288 x 10 -10 esu.…”

Section: Optical and Optoelectronic Parameters;mentioning

confidence: 93%

Effect of Graphene Additives on the Structure and Optical Parameters of Pure Sodium Borate Glass

Gomaa

Saudi

Yahia

et al. 2022

J. Electron. Mater.

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“…where Z is the sample position, Io is the laser beam intensity at the focus, L eff is the thin film length under scan, and Z R is the Rayleigh length [33]. Figure 9 displays the open aperture traces of samples.…”

Section: Z-scan Techniquementioning

confidence: 99%

Electrical, optical and nonlinear optical process in spray pyrolyzed Zn:CuO nanostructures for optoelectronic device applications

Corda,

Thundiyil,

Ani

et al. 2024

Mater. Res. Express

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Nanostructured pure and Zn doped CuO thin films were deposited on a glass substrate at 400 °C using the chemical spray pyrolysis method. The fabricated thin films were characterized to study the compositional, structural, morphological, optical and electrical properties. X-ray diffraction spectra show the polycrystalline nature of the sample and confirm the monoclinic phase of copper oxide. Raman analysis further confirms the absence of cuprous oxide phases and impurities. High absorbance in the visible region was observed for the films with bandgap values ranging from 1.7–2.0 eV. A near-band edge emission peak in the red region is recorded in the photoluminescence spectra. Uniformly distributed nanoparticles are observed in SEM images. Hall effect measurements indicate p-type conductivity and 5% Zn doped copper oxide showed the highest conductivity and carrier concentration. The non-linear absorption coefficient (β eff) of the samples was obtained with the help of z-scan method with a Helium-Neon laser under the CW regime. Zn doping results in an increase in nonlinear absorption, supporting the use of Zn:CuO for optoelectronic devices.

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Effect of electron beam on structural, linear and nonlinear properties of nanostructured Fluorine doped ZnO thin films

Cited by 22 publications

References 32 publications

X-ray photoelectron spectroscopy, Raman and photoluminescence studies on formation of defects in Cu:ZnO thin films and its role in nonlinear optical features

X-ray photoelectron spectroscopy, Raman and photoluminescence studies on formation of defects in Cu:ZnO thin films and its role in nonlinear optical features

Effect of Graphene Additives on the Structure and Optical Parameters of Pure Sodium Borate Glass

Electrical, optical and nonlinear optical process in spray pyrolyzed Zn:CuO nanostructures for optoelectronic device applications

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