Effect of electromagnetic interference frequency on CMOS inverters

Jie, 陈杰 Chen; Zhengwei, 杜正伟 Du

doi:10.3788/hplpb20122401.0147

Cited by 2 publications

(2 citation statements)

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“…With the development of new materials and technologies, circuits and devices are more integrated and widely used in various fields, such as national defence and communications, at the same time, the sensitivity to external electromagnetic interference has been greatly improved, thus the anti-interference ability has been reduced [1,2]. Therefore, it is necessary to research the surface current response of metal shell under electromagnetic pulse environment.…”

Section: Introductionmentioning

confidence: 99%

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Simulation of the surface current density with conductors

Wang,

Zhao

et al. 2024

Fourth International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2024)

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Section: Introductionmentioning

confidence: 99%

“…Among (1), H r represents the magnetic field intensity near the conductor surface, l represents the measuring loop, t J r represents the current density on the conductor surface, and s represents the effective measurement area. Due to the current density only exists with the metal shell surface, the form (1) could be deformed as follows:…”

Section: Introductionmentioning

confidence: 99%

Simulation of the surface current density with conductors

Wang,

Zhao

et al. 2024

Fourth International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2024)

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Modeling and understanding of the frequency dependent HPM upset susceptibility of the CMOS inverter

Chai

Liu

et al. 2015

Sci. China Inf. Sci.

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In this paper, we interpret and, for the first time, model a frequency dependent high-power microwave (HPM) upset susceptibility. We constructed the analytical models of the total amount of injected charges N inj , the excess carrier density distribution in P-Substrate, and the frequency dependent HPM upset susceptibility level. The models are validated by simulated results and experimental data, respectively. Results reveal that N inj is proportional to f α while the exponent α should be adjusted to −0.525. The excess carrier density distribution behaves the frequency dependence as well; the dependence is attributable to the fact that the AC field within the CMOS inverter varies too rapidly for the carriers to follow at high frequency. Meanwhile, the HPM upset susceptibility level is a decreasing function of f . The f dependent HPM upset susceptibility model is verified to be reliable and able to quickly estimate the susceptibility level of CMOS inverter considering IC technology, layout parameters, pulse properties, and operating environment simultaneously. Besides, the empirical formula P = A · f α is proposed to provide instant estimation to the HPM upset power threshold. In conclusion, by aid of the analytical model, we acquired the influence of the layout parameter L B on the HPM susceptibility and demonstrated that the CMOS inverter with minor L B is more susceptible to HPM.

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Effect of electromagnetic interference frequency on CMOS inverters

Cited by 2 publications

References 0 publications

Simulation of the surface current density with conductors

Simulation of the surface current density with conductors

Modeling and understanding of the frequency dependent HPM upset susceptibility of the CMOS inverter

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