Linking structural
and compositional features with the observed
electrochemical performance is often ambiguous and sensitive to known
and unknown impurities. Here an extensive experimental investigation
augmented by computational analyses is linked to the electrochemical
characterization of in situ nitrogen-doped tetrahedral
amorphous carbon thin films (ta-C:N). Raman spectroscopy combined
with X-ray reflectivity shows nitrogen disrupting the sp3 C–C structure of the reference ta-C, supported by the observations
of graphitic nitrogen substitution in X-ray absorption spectroscopy.
The surface roughness also increases, as observed in atomic force
microscopy and atomic-level computational analyses. These changes
are linked to significant increases in the hydrogen and oxygen content
of the films by utilizing time-of-flight elastic recoil detection
analysis. The conductivity of the films increases as a function of
the nitrogen content, which is seen as a facile reversible outer-sphere
redox reaction on ta-C:N electrodes. However, for the surface-sensitive
inner-sphere redox (ISR) analytes, it is shown that the electrochemical
response instead follows the oxygen and hydrogen content. We argue
that the passivation of the required surface adsorption sites by hydrogen
decreases the rates of all of the chemically different ISR probes
investigated on nitrogenated surfaces significantly below that of
the nitrogen-free reference sample. This hypothesis can be used to
readily rationalize many of the contradictory electrochemical results
reported in the literature.