Effect of Electric Field on Dielectric Properties of SnO₂ Sb₂O₃ and their Mixed Thin Films

Abstract

Thin films of various thicknesses in the MIM structure have been prepared from the the powders of SnO,, Sb,O, and (SnO, + SbzO3) of high purity by the thermal evaporation technique in a vacuum ofTorr. Dielectric properties of SnO,, Sb,O,, and their mixed thin films have been studied with ac and dc electric fields and frequency. Capacitance and loss tangent are almost independent on dc voltage upto 1.0 V for SnO,, 10.0 V for Sb,03 and 2.5 V for mixed films. These capacitors become unstable at 1.0 V for SnO, films and 2.5 V for mixed films. For higher film thicknesses the decay in these films starts at higher voltages. Capacitance and loss tangent increases with applied ac voltage in SnO,, Sb,O,, and their mixed films. A comparison of the capacitance values of SnO,, Sb,03, and their mixed films showed that the capacitance values are less in Sb,03 as compared to SnO, films. In mixed films the capacitance is greater than the constituent films. These studies have shown that Sb,03 films are found to be more stable compared to SnO, and their mixed films for ac and dc voltages. The results thus obtained on SnO,, Sb,O,, and their films are presented and discussed.