Effect of electric current on starting characteristics and activation parameters of short dislocations in Si crystals

Макара, В. А.; Steblenko, L. P.; Obukhovskii, V. V.; Gorid'ko, N. Ya.; Lemeshko, V. V.

doi:10.1134/1.1131305

Cited by 8 publications

(3 citation statements)

References 3 publications

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“…This can be caused by the simultaneous action of two opposite factors: electron generation and electron-hole recombination. It is known [10,[17][18] that Xirradiation of p-Si crystals leads to an increase in the dislocation path by about 3-4 times. In this case, the effect of increasing the mileage increases with an increase in the absorbed radiation dose, that is, there is a radiation-plastic effect.…”

Section: Resultsmentioning

confidence: 99%

“…The redistribution of the concentration of charge carriers, and the evolution of structural defects in deformed and X-ray irradiated p-Si crystals is largely determined by the perfection of the starting material, the presence and mobility of dislocations, which are drains for charges and defects, especially in the near-surface region [8]. In addition, a surface with sprayed metal contacts is an effective getter for deep-level structural defects [9,10]. The discrepancy between the parameters of the crystal lattices and the metal contact sprayed on it leads to the appearance of local mechanical stresses [11].…”

Section: Introductionmentioning

confidence: 99%

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Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

Lys¹,

Żyłka²,

Shykorjak³

et al. 2023

Adv. Sci. Technol. Res. J.

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Changes in the resistance of single crystals of p-type conductivity silicon under the action of mechanical loading were investigated in this research. Also, non-irradiated and pre-irradiated X-rays experimental samples were studied. It was found that at small deformation values when they are at the initial stage of the action of elastic deformation, a section forms and increases, on which the resistance practically does not depend on the applied mechanical load. In irradiated crystals, at small deformation values, electron generation processes dominate, which then recombine with the main carriers -holes. The consequence of such processes is the appearance of a maximum increase in electrical resistance at the initial stage of elastic deformation of experimental samples irradiated with X-rays. Charge carrier generation processes begin to dominate with further deformation. Such processes occur as a result of the release of acceptor centers from other complex defects, which are destroyed during the deformation of the Si crystal and captured by mobile dislocations. Thus, the processes of generation of charge carriers prevail over the processes of gettering and, accordingly, a mechano-stimulated decrease in the electrical resistance of p-Si samples occurs.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

Lys¹,

Żyłka²,

Shykorjak³

et al. 2023

Adv. Sci. Technol. Res. J.

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show abstract

“…Redistribution of carrier concentration and impurities in deformed crystals are often characterized by the presence of dislocations which are effective getters of defects, especially on the surface of the crystal [ 4 , 5 ]. It is known [ 3 , 6 ] that the excitation of crystal electronic subsystems is also accompanied by the corresponding changes in the dislocation mobility. Excitation of the electronic subsystems could be as a result of external influence, such as radiation and electrostatic field.…”

Section: Introductionmentioning

confidence: 99%

Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays

et al. 2017

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Changes in conductivity of irradiated and non-irradiated p-Si mono-crystals under the influence of elastic uniaxial mechanical stress were investigated in this paper. An analytical expression was suggested to describe the dependence of surface conductivity as a function of mechanical stress and X-ray irradiation dose. It was shown that 4-angular nano-particles on the surface of “solar” silicon affect the electroconductivity changes under mechanical stress. It was established that X-ray irradiation causes the generation of point defects in silicon. These defects suppress the dislocations movement. It was shown that the resistivity of previously irradiated samples of “electronic” silicon is only slightly sensitive to the influence of uniaxial compression at certain deformation rate.

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Sites of Initiation of Explosive-Emission Processes on the Surface of Single-Crystal and Coarse-Grained Polycrystalline Copper

2019

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Effect of electric current on starting characteristics and activation parameters of short dislocations in Si crystals

Cited by 8 publications

References 3 publications

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays

Sites of Initiation of Explosive-Emission Processes on the Surface of Single-Crystal and Coarse-Grained Polycrystalline Copper

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