Effect of elastic deformation and the magnetic field on the electrical conductivity of p-Si crystals

Lys, R. M.; Pavlyk, B.; Didyk, R. I.; Shykorjak, J.; Karbovnyk, Ivan

doi:10.1007/s13204-018-0707-y

Cited by 5 publications

(4 citation statements)

References 10 publications

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“…The absorbed dose was increasing by 130 Gy in every 30 minutes [13]. Mechano-stimulated change in electrical conductivity R(σ) the test samples were performed using the setup described in [13,14].…”

Section: Methodsmentioning

confidence: 99%

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

Lys¹,

Żyłka²,

Shykorjak³

et al. 2023

Adv. Sci. Technol. Res. J.

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Changes in the resistance of single crystals of p-type conductivity silicon under the action of mechanical loading were investigated in this research. Also, non-irradiated and pre-irradiated X-rays experimental samples were studied. It was found that at small deformation values when they are at the initial stage of the action of elastic deformation, a section forms and increases, on which the resistance practically does not depend on the applied mechanical load. In irradiated crystals, at small deformation values, electron generation processes dominate, which then recombine with the main carriers -holes. The consequence of such processes is the appearance of a maximum increase in electrical resistance at the initial stage of elastic deformation of experimental samples irradiated with X-rays. Charge carrier generation processes begin to dominate with further deformation. Such processes occur as a result of the release of acceptor centers from other complex defects, which are destroyed during the deformation of the Si crystal and captured by mobile dislocations. Thus, the processes of generation of charge carriers prevail over the processes of gettering and, accordingly, a mechano-stimulated decrease in the electrical resistance of p-Si samples occurs.

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Section: Methodsmentioning

confidence: 99%

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

Lys¹,

Żyłka²,

Shykorjak³

et al. 2023

Adv. Sci. Technol. Res. J.

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“…Також відомо, що одновісна деформація стиску супроводжується зменшенням опору зразка кремнію p-типу провідності, що пов'язано із зменшенням поздовжньої ефективної маси важких дірок [15][16][17] та відповідним збільшенням їхньої рухливості за стиску. За зупинки процесу одновісного стиску опір зразка з часом збільшується, тому що поступово зменшується кількість залишкових в процесі деформації електронних носіїв.…”

Section: методика експерименту для досліджень використовувалися зразк...unclassified

“…Відмінності у зміні опору від механічного навантаження R/R0 = f(σ), у порівнянні із вихідними кристалами, полягають у тому, що на початковій стадії одновісної пружної деформації опір збільшується (характерний максимум на кривих R/R0 = f(σ)). Аналогічний ефект нами спостерігався і після малих доз Х-опромінення (D = 312 Гр) [15].Відомо[9,[16][17], що витримка в МП кристалів кремнію посилює процеси дегідратації та розкладу молекул гідроксилу, які входять в структуру природної окисної плівки, і, можливо, інших молекул, наприклад, молекул SiOH, SiH, SiO, наявних у приповерхневих шарах кристалів. В результаті дії МП збільшується концентрація вільних ненасичених зв'язків, що повинно сприяти протіканню адсорбційних процесів на поверхні.…”

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FEATURES OF MECHANICALLY STIMULATED CHANGES IN THE ELECTRICAL CONDUCTIVITY OF P-Si CRYSTALS AFTER THE ACTION OF A MAGNETIC FIELD

Pavlyk¹,

Lys²,

Shykorjak³

et al. 2022

ELIT

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“…Thus, the nonlinear electronic materials with controllable inherent characteristics will play a vital role in intelligent nano‐sensors or detectors as a unit for information reception, processing or feedback. [ 2,9 ] The driving factors of nonlinear electronic materials can be usually classified into five types: stress, [ 10 ] temperature, [ 11 ] magnetic field, [ 12,13 ] light [ 14 ] and voltage. [ 15–18 ] Except for voltage, all of the other driving factors are difficult to be used in microelectronic fields due to complex control conditions or slow response times.…”

Section: Introductionmentioning

confidence: 99%

Fascinating Electrical Transport Behavior of Topological Insulator Bi₂Te₃ Nanorods: Toward Electrically Responsive Smart Materials

Hou

Zhang

et al. 2022

Small

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Electrical conductivity and dielectric parameters are general inherent features of materials. Controlling these characteristics through applied bias will add a new dimension to regulate the dynamic response of smart materials. Here, a fascinating electrical transport behavior is observed in topological insulator (TI) Bi2Te3 nanorods, which will play a vital role in intelligent materials or devices as a unit for information reception, processing or feedback. The Bi2Te3 nanorod aggregates exhibit a monotonic resistance response to voltage, with observed four‐fold change of electrical conductivity in a small range electric field of 1 V mm−1. The dielectric constant and dielectric loss of Bi2Te3 nanorod composites also show strong dependences on bias voltage due to the unique electrical transport characteristics. The unique voltage‐controlled electrical responses are attributed to the change of Fermi levels within the band structure of disordered TI nanorods, which are non‐parallel to the applied electric field. The excellent controllable inherent characteristics through electric field endows Bi2Te3 nanomaterials bright prospects for applications in smart devices and resistive random access memories.

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Effect of elastic deformation and the magnetic field on the electrical conductivity of p-Si crystals

Cited by 5 publications

References 10 publications

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

FEATURES OF MECHANICALLY STIMULATED CHANGES IN THE ELECTRICAL CONDUCTIVITY OF P-Si CRYSTALS AFTER THE ACTION OF A MAGNETIC FIELD

Fascinating Electrical Transport Behavior of Topological Insulator Bi₂Te₃ Nanorods: Toward Electrically Responsive Smart Materials

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Effect of elastic deformation and the magnetic field on the electrical conductivity of p-Si crystals

Cited by 5 publications

References 10 publications

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

FEATURES OF MECHANICALLY STIMULATED CHANGES IN THE ELECTRICAL CONDUCTIVITY OF P-Si CRYSTALS AFTER THE ACTION OF A MAGNETIC FIELD

Fascinating Electrical Transport Behavior of Topological Insulator Bi2Te3 Nanorods: Toward Electrically Responsive Smart Materials

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Fascinating Electrical Transport Behavior of Topological Insulator Bi₂Te₃ Nanorods: Toward Electrically Responsive Smart Materials