Effect of doping level and spray time on zinc oxide thin films produced by spray pyrolysis for transparent electrodes applications

Achour, Z. Ben; Ktari, T.; Ouertani, B.; Touayar, O.; Bessaı̈s, B.; Brahim, J. Ben

doi:10.1016/j.sna.2006.05.001

Cited by 48 publications

(21 citation statements)

References 15 publications

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“…The deposition temperature is 460°C for optimal duration of 60 min [4]. The choice of this temperature allows to obtain 90% transparent ZnO layers in the range of 500-2500 nm.…”

Section: Zno Deposition On Ge Junctions: Optical and Electrical Charamentioning

confidence: 99%

“…The choice of this temperature allows to obtain 90% transparent ZnO layers in the range of 500-2500 nm. The ZnO thin films thus produced have a resistivity of 3 Â 10 À3 V cm and a preferred crystallographic orientation (0,0,2) [4]. The thickness of these thin films is approximately 1 mm and their gaps is of the order of 3.21 eV [4].…”

Section: Zno Deposition On Ge Junctions: Optical and Electrical Charamentioning

confidence: 99%

“…The ZnO thin films thus produced have a resistivity of 3 Â 10 À3 V cm and a preferred crystallographic orientation (0,0,2) [4]. The thickness of these thin films is approximately 1 mm and their gaps is of the order of 3.21 eV [4]. Figure 3 shows a section of the structure forming the achieved ZnO/Ge photodiode.…”

Section: Zno Deposition On Ge Junctions: Optical and Electrical Charamentioning

confidence: 99%

“…Indeed, the ZnO thin films in addition to their transparent features in the near infrared, are excellent candidates for the transparent electrodes and antireflective coats [3][4][5]. The optical and electrical properties of ZnO thin films allow them to reduce the reflectivity of the substrates on which they are deposited and to drive the charges created on the surface to the outer circuit [6].…”

Section: Introductionmentioning

confidence: 99%

“…These photodiodes are Germanium junctions formed by ion implantation where we deposited on the front face a thin layer of zinc oxide by the Spray pyrolysis technique [4,7,8].…”

Section: Introductionmentioning

confidence: 99%

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Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared

Achour

Hammami

Touayar

2017

Int. J. Metrol. Qual. Eng.

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Abstract. The metrology group of radiometric and pyrometric measurements of INSAT include among others the development of detectors that will be used as a standard in the MMA Laboratory for optical radiation measurements in the visible and infrared spectral range. In this work, we present the design and realization of a detector for near infrared radiation measurements: it is a photodiode ZnO/Ge based on a germanium junction and a thin layer of zinc oxide. Then we electrically and optically characterized the photodiode thus realized, for which we developed an energy band diagram. The obtained results have allowed us to note an improvement in the optical and electrical characteristics of the ZnO/Ge photodiode, compared to those performed in our laboratory and based on single Germanium. The reflectivity is reduced by about 9% for the wavelength range of 800 nm to 2000 nm. The shunt resistance increases from 95 V to 12.915 kV. However, the series resistance increases from 1.08 V to 36 V but it is still an acceptable value. The proposed energy band diagram explains the charge carrier transport phenomena for our structure and it is in good agreement with experimental results.

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“…The deposition temperature is 460°C for optimal duration of 60 min [4]. The choice of this temperature allows to obtain 90% transparent ZnO layers in the range of 500-2500 nm.…”

Section: Zno Deposition On Ge Junctions: Optical and Electrical Charamentioning

confidence: 99%

Section: Zno Deposition On Ge Junctions: Optical and Electrical Charamentioning

confidence: 99%

Section: Zno Deposition On Ge Junctions: Optical and Electrical Charamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…These photodiodes are Germanium junctions formed by ion implantation where we deposited on the front face a thin layer of zinc oxide by the Spray pyrolysis technique [4,7,8].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared

Achour

Hammami

Touayar

2017

Int. J. Metrol. Qual. Eng.

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Synthesis of sodium titanates and their use in the photocatalytic degradation of NO

Bastida

Maldonado²,

Reyes-Vidal

et al. 2022

Environ Sci Pollut Res

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The synthesis and characterization of sodium titanates (ST), and their evaluation in the photocatalytic reduction of nitric oxide (NO) are described herein. The materials were synthesized by a hydrothermal route using 5 M NaOH as the mineralizer agent and a TiO 2 content of 0.06 mg/mL (expressed as the mass ratio of TiO 2 /mL of NaOH), at 170 °C for 48 hours, resulting in sodium tri-and hexa-titanates. A nanotubular morphology was observed for the ST, as proved by scanning electron microscopy (SEM); a subsequent heat-treatment at 400 °C allowed a complete transformation of sodium tri-to hexa-titanates and an increase in bandgap. The obtained ST were impregnated with Ag + and Zn + cations, ST-Ag and ST-Zn, respectively, to tune the materials' bandgap. XPS analysis of the ST-Ag materials showed evidence of metallic Ag, pointing to the formation of silver nanoparticles, whereas for ST-Zn oxide phases were mainly spotted. The materials were evaluated for the photocatalytic reduction of NO using a reactor fed with a continuous ow rate of NO, generated in situ at a ow of 280 mL/min using nitrogen and a 253 nm UV irradiation source. The photocatalytic tests showed that pristine ST (tri-and hexa-titanates) displayed better performance in the reduction of NO with respect to the impregnated samples (ST-Ag, ST-Zn).Maximum degradation e ciencies of 80% were achieved when 1 g of photocatalyst was used with a ow of 280 mL/min and a 253 nm UV lamp.

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Highly oriented (100) ZnO thin films by spray pyrolysis

Rao

Kumar

2009

Applied Surface Science

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Effect of doping level and spray time on zinc oxide thin films produced by spray pyrolysis for transparent electrodes applications

Cited by 48 publications

References 15 publications

Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared

Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared

Synthesis of sodium titanates and their use in the photocatalytic degradation of NO

Highly oriented (100) ZnO thin films by spray pyrolysis

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