2020
DOI: 10.15251/cl.2020.177.375
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EFFECT OF DOPANT CONCENTRATION ON STRUCTURAL PROPERTIES OF CHEMICAL BATH DEPOSITED Mn-DOPED PbS NANOCRYSTALLINE THIN FILMS

Abstract: Mn-doped PbSnanocrystalline thin films of three different dopant concentrations of 1 wt.%, 1.5 wt.% and 2 wt.% Mn were deposited onto glass substrates at 313K by Chemical Bath Deposition Method (CBD) using lead acetate and thiourea as precursors with Manganese acetate as dopant precurser. The as prepared thin films were characterized by using X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and Energy Dispersive X-ray (EDAX). Analysis of energy dispersive X-ra… Show more

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Cited by 5 publications
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“…Figure (6) shows the IV characteristics for all samples, which demonstrate Schottky junction behavior of all samples, while for 0%Nd, the ohmic contact is behavior prominent. The rise in dark current is partly caused by an increase in the number of free carriers (electrons and holes) and partially by a reduction in the potential barrier at the grain boundaries, which improves carrier mobility at the grain boundaries and boosts the carriers' photoconductivity [28].…”
Section: Resultsmentioning
confidence: 99%
“…Figure (6) shows the IV characteristics for all samples, which demonstrate Schottky junction behavior of all samples, while for 0%Nd, the ohmic contact is behavior prominent. The rise in dark current is partly caused by an increase in the number of free carriers (electrons and holes) and partially by a reduction in the potential barrier at the grain boundaries, which improves carrier mobility at the grain boundaries and boosts the carriers' photoconductivity [28].…”
Section: Resultsmentioning
confidence: 99%