Effect of Dimension &amp; Material Composition on Transmission Coefficient and Tunneling Current of Double Quantum Barrier Structure with Band Nonparabolicity

The growth of pepped-up determining demand of final consumers always forces devices and circuits to increase power and speed. Only resonant tunneling diode can solve this problem and can be able to take a vital role in many nanoscale applications. This research paper demonstrates the simulations of the Resonant Tunneling Diode (RTD) by using Hartree Model for the single barrier (1B) and the double barrier (2B) Resonant Tunneling Diodes by the using of NEMO5 considering NEGF. In addition, switching applications also require a Large Peak to Valley Voltage Ratio (PVVR) to reduce energy loss. In this article, it has been clearly explained that compared to the Thomas Fermi Model, Hartree Model improves the Peak to Voltage Valley Ratio (PVVR) by 21.21%. The results of the Double Barrier RTD showed much better performance than the Single Barrier RTD. Furthermore, the I-V characteristic verified the notable improvement for the Hartree model.

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“…means of one dimension, timeless Schrodinger's equation can explain the performance of a single electron [10] [17];…”

Section: Bymentioning

confidence: 99%

“…To add the inflexible scattering and powerful effects of correlation at an atomics level, it excels the Landauer proposition for choleric, noninteracting electronics. Double barrier RTD structures recently can be analyzed by Transfer Matrix Method (TMM) [10]. The numerous applications of RTD can be applied in both digital and analog circuits [11].…”

mentioning

confidence: 99%