Effect of different metal-backed waveguides on amplified spontaneous emission

Zhang, Bo; Hou, Yanbing; Lou, Zhidong; Feng, Tao; Liu, Xiaojun; Hu, Bing; Li, Meng; Wenbin, WU

doi:10.1088/1674-1056/21/8/084212

Chinese Phys. B

2012

DOI: 10.1088/1674-1056/21/8/084212

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Effect of different metal-backed waveguides on amplified spontaneous emission

Bo Zhang¹,

Yanbing Hou²,

Zhidong Lou³

et al.

Abstract: We investigate the effect of a metallic electrode on the ability for poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) film to undergo amplified spontaneous emission (ASE). The threshold of the device with Ag cladding is about 10 times greater than that of a metal-free device, but metal such as Al completely shuts off ASE. The ASE recurs when a thin spacer layer, such as a few nanometers of SiO2, is introduced between the MEH-PPV film and the Al cladding. Compared with the Cu or Al electrod… Show more

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Cited by 3 publications

References 18 publications

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Improvement of amplified spontaneous emission performance of conjugated polymer waveguides with a low loss cladding

Zhang

Hou

Lou

et al. 2012

Applied Physics Letters

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We report the improvement of the amplified spontaneous emission (ASE) performance in the optically pumped symmetric thin film waveguide glass/indium-tin oxide (ITO)/SiO2/poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene]/SiO2/Al or Ag by optimizing the thickness of SiO2 and replacing the Al electrode with Ag, where SiO2 acted as a spacer layer to prevent the ASE at 620 nm from being destructed. The results show that the SiO2/Ag cladding reduced the ASE threshold to 4 μJ/pulse compared with the SiO2/Al cladding, owing to the higher work function and reflection rate as well as lower absorption loss of the Ag electrode. No photoluminescence at 580 nm being observed makes it possible for an electric field to only modulate the ASE at 620 nm in the device with the SiO2/Ag cladding. The electric-field quenching of the ASE has been observed, which increases with the electric field. The field dependence of ASE can be attributed to field-induced dissociation of photogenerated excitons in the polymer waveguides.

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Improvement of amplified spontaneous emission performance of conjugated polymer waveguides with a low loss cladding

Zhang

Hou

Lou

et al. 2012

Applied Physics Letters

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Spontaneous-Emission Coupling from an Excited Atom into a Symmetrical Metal-Cladding Optical Waveguide

Tan¹,

Huang²

2014

Chinese Phys. Lett.

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We consider the coupling behavior which transfers the energy of the spontaneous emission from an atom embedded in free space into a symmetrical metal-cladding optical waveguide. The ratio for spontaneous emission into the waveguide modes is derived by using a compact form of Green's function for a multilayer. Up to 90% of the spontaneous emission energy fed into the waveguide is demonstrated when the atom is positioned above the waveguide in a limited space range.

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Analytic function for spontaneous emission spectrum of InP/InGaAsP multi-quantum wells

Chen¹

2017

Acta Phys. Sin.

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The analytic function for the amplified spontaneous emission spectrum of InP/InGaAsP multi-quantum wells is studied by spectrum fitting. Three fitting functions, Lorentz, Gaussian and Sech line shape functions are chosen, and the analytical expressions for the above three functions are obtained with Levenberg-Marquardt algorithm, respectively. The center wavelength of Lorentz line shape function spectrum fitting is 1548.707 nm with 66.23 nm of full-width half maximum (FWHM), -0.00036484 mW power compensation, 0.98294 of R-square and 4.7674310-6 of residual sum of squares; the center wavelength of Gaussian line shape function spectrum fitting is 1548.651 nm with 61.42 nm of FWHM, 0.00212 mW power compensation, 0.99191 of R-square and 2.2650510-6 of residual sum of squares; the center wavelength of Sech line shape function spectrum fitting is 1548.787 nm with 36.99 nm of FWHM, 0.00222 mW power compensation, 0.98128 of R-square and 5.2433110-6 of residual sum of squares. It can be seen that Gaussian line shape function spectrum fitting has the highest R-square and smallest residual sum of squares, and the residual squares of data are symmetrically distributed among 0.0001. Gaussian line shape function spectrum fitting has higher fitting degree. It is demonstrated that InP/InGaAsP multi-quantum wells is a kind of active layer quantum well structure semiconductor material, whose amplified spontaneous emission spectrum line shape belongs to inhomogeneous broadening due to the effect of lattice defects, the corresponding line shape function is Gaussian line shape function, and the amplified spontaneous emission spectrum line shape function can be used for designing the optical passive devices.

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Effect of different metal-backed waveguides on amplified spontaneous emission

Cited by 3 publications

References 18 publications

Improvement of amplified spontaneous emission performance of conjugated polymer waveguides with a low loss cladding

Improvement of amplified spontaneous emission performance of conjugated polymer waveguides with a low loss cladding

Spontaneous-Emission Coupling from an Excited Atom into a Symmetrical Metal-Cladding Optical Waveguide

Analytic function for spontaneous emission spectrum of InP/InGaAsP multi-quantum wells

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