2018
DOI: 10.1016/j.matpr.2018.01.052
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Effect of deposition time on structural, electrical and optical properties of Aluminium doped ZnO thin films by RF magnetron sputtering

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Cited by 16 publications
(9 citation statements)
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“…The diffraction angle of the (002) plane increases from 33.89° to 34.15°, indicating that as the film thickness increases, the residual stress decreases. In addition, the full width at half maximum (FWHM) of the (002) peaks decrease, which may be attributed to an improvement in the structural quality of the crystallites 25…”
Section: Composition and Structural Propertiesmentioning
confidence: 99%
See 1 more Smart Citation
“…The diffraction angle of the (002) plane increases from 33.89° to 34.15°, indicating that as the film thickness increases, the residual stress decreases. In addition, the full width at half maximum (FWHM) of the (002) peaks decrease, which may be attributed to an improvement in the structural quality of the crystallites 25…”
Section: Composition and Structural Propertiesmentioning
confidence: 99%
“…When the islands begin to coalesce, the strain tends to be released.AZO crystallites deposited by the described method at a lower deposition temperature are larger than those of ZnO reported in the literature24 .The diffraction angle of the (002) plane increases from 33.89° to 34.15°, indicating that as the film thickness increases, the residual stress decreases. In addition, the full width at half maximum (FWHM) of the (002) peaks decrease, which may be attributed to an improvement in the structural quality of the crystallites25 . The FWHM is related to the crystallite size via the Scherrer equation26…”
mentioning
confidence: 99%
“…At low total pressure conditions (<11.5 mTorr), anatase (101) exists at low sputtering power (200 W), whereas mixed anatase and rutile phases formed at high RF power (200 to 300 W). Anatase (112) is obtained only at high levels of RF power and high total pressure. These findings are confirmed by using a high RF power, resulting in a mixture of highly crystalline anatase and rutile phases [55].…”
Section: Sputtering Powermentioning
confidence: 99%
“…The effects of the argon/oxygen ratio on the crystallinity and surface chemical composition of TiO 2 films have been investigated in many studies [79,83,105,106,[110][111][112]. Oxygen plays an important role in the preparation of TiO 2 films via magnetron sputtering.…”
Section: Argon/oxygen Ratiomentioning
confidence: 99%
“…In these ITO thin films, indium is more than 90% in composition [10] and is an increasingly expensive and scarce element [11]. Alternative TCO materials with substituted or reduced use of indium having desired opto-electrical characteristics are being developed through vacuum-intensive physical vapor deposition methods like magnetron sputtering [12], radio frequency [13], and direct current [14,15] sputtering along with atomic layer deposition [16], aerosol assisted [17], atmospheric pressure [18], and chemical vapor deposition methods. These electrodes are also obtained through solution processes like spin-coating [19,20], dip-coating [21], and spray pyrolysis [22][23][24].…”
Section: Introductionmentioning
confidence: 99%