Abstract:The deposition temperature of hydrogenated amorphous silicon films deposited by dc glow discharge was found to affect the photoresponse (ratio of the photo to dark conductivity) after crystallization of the film. This effect depended on the crystallization technique. For crystallization by laser annealing, the photoresponse (0.15 -1.5) increased with increasing deposition temperature (150 -300 oC) due to the increase in SiH and Sill 2 bonding, as shown by infrared spectroscopy. For crystallization by furnace a… Show more
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