2020
DOI: 10.1007/s10854-020-04210-z
|View full text |Cite
|
Sign up to set email alerts
|

Effect of Cu2+ doping on the structural, optical, and vapor-sensing properties of ZnO thin films prepared by SILAR method

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 18 publications
(2 citation statements)
references
References 51 publications
0
2
0
Order By: Relevance
“…This interchange mechanism contributes to changes in the depletion layer and changes in surface or grain boundary. In the experiment, the main reasons for the change in the vapour sensor's electrical properties appear to be the oxygen contribution [32][33][34][35][36]. In Zr (3 wt.…”
Section: Nh3 Vapour Sensing Studiesmentioning
confidence: 99%
“…This interchange mechanism contributes to changes in the depletion layer and changes in surface or grain boundary. In the experiment, the main reasons for the change in the vapour sensor's electrical properties appear to be the oxygen contribution [32][33][34][35][36]. In Zr (3 wt.…”
Section: Nh3 Vapour Sensing Studiesmentioning
confidence: 99%
“…Most of the existing literature focuses on the study of SILAR-coated ZnO films in the context of gas, vapour and alcohol sensors [48][49][50][51][52] and photoelectrochemical studies [38,53]. However, there is very little research specifically addressing the effect of film thickness of ZnO grown using the SILAR technique on the photodegradation rate of dyes under sunlight.…”
Section: Introductionmentioning
confidence: 99%