Effect of Cu doping on structural and magnetic properties of antiperovskite Mn3Ni(Cu)N thin films

Na, Yuanyuan; Wang, Wenwen; Tomasella, Éric; Cellier, J.; Xiang, Jinzhong

doi:10.1016/j.jallcom.2015.05.212

Cited by 4 publications

(2 citation statements)

References 22 publications

(22 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Further, it has been reported that the magnetic properties and crystalline lattices of antiperovskite nitrides such as Mn3XN (X = Cu, Ni, Ag, Zn, Ga, etc.) are dependent on the density of the valence electrons, and these crystals have been grown and evaluated in many ways [22][23][24][25]. In particular, the calculation and validation of antiferromagnetism in non-collinear magnetic moments of (Mn,Ni)4N, and the negative thermal expansion at the Néel temperature have been reported [25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

Komori

Anzai

Gushi

et al. 2019

Journal of Crystal Growth

View full text Add to dashboard Cite

We grew Mn4−xNixN epitaxial thin films on MgO(001) by molecular beam epitaxy, as well as studied their crystalline qualities and magnetic properties. The films were decomposed into Ni8N or Mn-Ni alloys when x ≥ 2, as confirmed by X-ray diffraction and reflection high-energy electron diffraction, but this decomposition was mitigated by reducing the substrate growth temperature. The lattice constants decreased with increased Ni substitution except when the Mn ratio was high, while the crystal orientation tended to degrade. The magnetic properties were measured via vibrating sample magnetometer, and it was found that the saturation magnetization (MS) and perpendicular magnetic anisotropy (PMA) diminished with a small amount of Ni substitution. Specifically, the MS value was remarkably decreased from 86.3 ± 1.1 emu/cm 3 (Mn4N) to 19.0 ± 0.5 emu/cm 3 (Mn3.85Ni0.25N), and the magnetic anisotropy constant was decreased from approximately 0.94 to 0.027 Merg/cm 3 , respectively. The PMA vanished with further Ni substitution. Ultimately, a small MS and a PMA were simultaneously achieved with a small amount of Ni substitution. These properties support spin transfer torque, which can be applied to the emerging non-volatile memory devices using domain wall motion.

show abstract

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

Komori

Anzai

Gushi

et al. 2019

Journal of Crystal Growth

View full text Add to dashboard Cite

show abstract

“…Interesting properties of Mn 3 AN bulk materials have been reported in the literature, for instance, anomalous temperature dependence of resistivity, anomalous thermal expansion, giant barocaloric effects, and giant magnetovolume coupling . As thin films, Mn 3 NiN 1– x , Mn 3 NiN, , and a small number of other members of the Mn 3 AN family (A = Cu and Ga) − have been grown. However, the focus has been primarily on growth, and basic physical properties and previous experimental reports of piezomagnetism are absent.…”

Section: Introductionmentioning

confidence: 99%

Giant Piezomagnetism in Mn₃NiN

Boldrin

Mihai

Zou

et al. 2018

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Controlling magnetism with electric field directly or through strain-driven piezoelectric coupling remains a key goal of spintronics. Here, we demonstrate that giant piezomagnetism, a linear magneto-mechanic coupling effect, is manifest in antiperovskite MnNiN, facilitated by its geometrically frustrated antiferromagnetism opening the possibility of new memory device concepts. Films of MnNiN with intrinsic biaxial strains of ±0.25% result in Néel transition shifts up to 60 K and magnetization changes consistent with theory. Films grown on BaTiO display a striking magnetization jump in response to uniaxial strain from the intrinsic BaTiO structural transition, with an inferred 44% strain coupling efficiency and a magnetoelectric coefficient α (where α = d B/d E) of 0.018 G cm/V. The latter agrees with the 1000-fold increase over CrO predicted by theory. Overall, our observations pave the way for further research into the broader family of Mn-based antiperovskites where yet larger piezomagnetic effects are predicted to occur at room temperature.

show abstract

Thermoelectric, electronic and structural properties of CuNMn3 cubic antiperovskite

et al. 2018

View full text Add to dashboard Cite

Effect of Cu doping on structural and magnetic properties of antiperovskite Mn3Ni(Cu)N thin films

Cited by 4 publications

References 22 publications

Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

Giant Piezomagnetism in Mn₃NiN

Thermoelectric, electronic and structural properties of CuNMn3 cubic antiperovskite

Contact Info

Product

Resources

About

Effect of Cu doping on structural and magnetic properties of antiperovskite Mn3Ni(Cu)N thin films

Cited by 4 publications

References 22 publications

Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

Giant Piezomagnetism in Mn3NiN

Thermoelectric, electronic and structural properties of CuNMn3 cubic antiperovskite

Contact Info

Product

Resources

About

Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

Giant Piezomagnetism in Mn₃NiN