Effect of CsF interlayer on the performance of polymer bulk heterojunction solar cells

Jiang, Xiaoxia; Xu, Hao; Yang, Ligong; Shi, Minmin; Wang, Mang; Chen, Hongzheng

doi:10.1016/j.solmat.2009.01.005

Cited by 53 publications

(37 citation statements)

References 31 publications

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“…[92] The power conversion efficiency of OPVs with the structure MDMO-PPV/PCBM/CsF/Al were higher, when compared to those with a LiF/Al negative electrode. [93] These results could be explained by the lower series resistance of CsF, which is almost constant in the range of the CsF thicknesses studied. [88] Poly(ethylene oxide) (PEO) and conjugated polyelectrolytes were also effective as the interlayer between the active layer and the cathode.…”

Section: Use Of Metal Fluoride Layers For the Negative Electrode Contmentioning

confidence: 91%

Roles of Interlayers in Efficient Organic Photovoltaic Devices

Park

Lee

Chin

et al. 2010

Macromol. Rapid Commun.

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This review discusses interfacial layers in organic photovoltaic devices. The first part of the review focuses on the hole extraction layer, which is located between a positive electrode and an organic photoactive material. Strategies to improve hole extraction from the photoactive layer include incorporation of several different types of hole extraction layers, such as conductive polymeric materials, self-assembled molecules and metal oxides, as well as surface treatment of the positive electrodes and the conductive polymeric layers. In the second part, we review recent research on interlayers that are located between a negative electrode and a photoactive layer to efficiently extract electrons from the active layer. These materials include titanium oxides, metal fluorides and other organic layers.

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Section: Use Of Metal Fluoride Layers For the Negative Electrode Contmentioning

confidence: 91%

Roles of Interlayers in Efficient Organic Photovoltaic Devices

Park

Lee

Chin

et al. 2010

Macromol. Rapid Commun.

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“…The transition metal ruthenium (Ru) is selected as a second contact layer because of its high work function and its interaction with InP, resulting in the enhancement of the barrier height. The main advantage of the Schottky diode is high current density and low forward voltage drop [26]. The Schottky diodes are commonly used in switching circuits and highfrequency applications because it can switch from one state to another much faster than ordinary p-n junction diodes.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent electrical parameters and current transport mechanisms of Ru/Ti/n-InP Schottky diodes

Reddy¹,

Padmasuvarna

Narasappa

et al. 2015

Indian J Phys

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The temperature-dependent electrical properties of Ru/Ti/n-InP Schottky diodes have been investigated in the temperature range of 120 to 400 K. The estimated barrier heights for the Ru/Ti/n-InP Schottky barrier diode from the I-V and C-V characteristics vary from 0.24 to 0.73 eV (I-V) and 0.94 to 0.74 eV (C-V) and the ideality factor (n) from 4.65 to 1.80 in the temperature range of 120-400 K. It has been observed that the ideality factor decreases while the barrier height increases with the increase in temperature. The barrier height (U b ), ideality factor (n) and series resistance (R s ) of the Ru/Ti/n-InP Schottky diode have been also determined using Cheung's and Norde methods. The discrepancy between the barrier heights obtained from the I-V and C-V characteristics is discussed. The interface state densities (N ss ) extracted for the Ru/Ti/n-InP Schottky diode are in the range of 6.75 9 10 13 eV -1 cm -2 (E c -0.23 eV)-1.09 9 10 14 eV -1 cm -2 (E c -0.17 eV) at 120 K and 1.67 9 10 13 eV -1 cm -2 (E c -0.75 eV)-5.02 9 10 13 eV -1 cm -2 (E c -0.59 eV) at 400 K. It is observed that the interface state density (N ss ) decreases with increase in temperature. Results reveal that the conduction current is dominated by Poole-Frenkel emission in the temperature range from 120 to 320 K and by Schottky emission above 360 K.

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“…[1][2][3] Although the power conversion efficiency (PCE) of OPVs has been greatly improved recently, [4,5] a systematic study is required to clarify the phenomenon of charge extraction, which strongly affects device efficiency and lifetime. [6][7][8][9][10] Alkali and alkali earth metals (e.g., Mg, Ca, Ba) have been used as the interfacial cathode layer and have a great influence on the open-circuit voltage (V oc ). [3] To obtain efficient electron extraction, materials of many types have been employed as the interlayer of the cathode.…”

Section: Introductionmentioning

confidence: 99%

Role of Ultrathin Metal Fluoride Layer in Organic Photovoltaic Cells: Mechanism of Efficiency and Lifetime Enhancement

et al. 2014

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Although rapid progress has been made recently in bulk heterojunction organic solar cells, systematic studies on an ultrathin interfacial layer at the electron extraction contact have not been conducted in detail, which is important to improve both the device efficiency and the lifetime. We find that an ultrathin BaF2 layer at the electron extraction contact strongly influences the open-circuit voltage (Voc ) as the nanomorphology evolves with increasing BaF2 thickness. A vacuum-deposited ultrathin BaF2 layer grows by island growth, so BaF2 layers with a nominal thickness less than that of single-coverage layer (≈3 nm) partially cover the polymeric photoactive layer. As the nominal thickness of the BaF2 layer increased to that of a single-coverage layer, the Voc and power conversion efficiency (PCE) of the organic photovoltaic cells (OPVs) increased but the short-circuit current remained almost constant. The fill factor and the PCE decreased abruptly as the thickness of the BaF2 layer exceeded that of a single-coverage layer, which was ascribed to the insulating nature of BaF2 . We find the major cause of the increased Voc observed in these devices is the lowered work function of the cathode caused by the reaction and release of Ba from thin BaF2 films upon deposition of Al. The OPV device with the BaF2 layer showed a slightly improved maximum PCE (4.0 %) and a greatly (approximately nine times) increased device half-life under continuous simulated solar irradiation at 100 mW cm(-2) as compared with the OPV without an interfacial layer (PCE=2.1 %). We found that the photodegradation of the photoactive layer was not a major cause of the OPV degradation. The hugely improved lifetime with cathode interface modification suggests a significant role of the cathode interfacial layer that can help to prolong device lifetimes.

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Effect of CsF interlayer on the performance of polymer bulk heterojunction solar cells

Cited by 53 publications

References 31 publications

Roles of Interlayers in Efficient Organic Photovoltaic Devices

Roles of Interlayers in Efficient Organic Photovoltaic Devices

Temperature-dependent electrical parameters and current transport mechanisms of Ru/Ti/n-InP Schottky diodes

Role of Ultrathin Metal Fluoride Layer in Organic Photovoltaic Cells: Mechanism of Efficiency and Lifetime Enhancement

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