Effect of crystal orientation on the formation of bct-5 silicon

Mylvaganam, Kausala; Zhang, Liangchi

doi:10.1007/s00339-015-9323-9

Cited by 22 publications

(8 citation statements)

References 34 publications

(49 reference statements)

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“…These results were recently corroborated and extended [47]. Already previously Mylvaganam and Zhang [44] studied the effect of crystal orientation on the formation of bct-5 silicon, using the Tersoff potential.…”

Section: Sisupporting

confidence: 68%

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Atomistic Studies of Nanoindentation—A Review of Recent Advances

2017

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This review covers areas where our understanding of the mechanisms underlying nanoindentation has been increased by atomistic studies of the nanoindentation process. While such studies have been performed now for more than 20 years, recent investigations have demonstrated that the peculiar features of nanoplasticity generated during indentation can be analyzed in considerable detail by this technique. Topics covered include: nucleation of dislocations in ideal crystals, effect of surface orientation, effect of crystallography (fcc, bcc, hcp), effect of surface and bulk damage on plasticity, nanocrystalline samples, and multiple (sequential) indentation. In addition we discuss related features, such as the influence of tip geometry on the indentation and the role of adhesive forces, and how pre-existing plasticity affects nanoindentation.

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Section: Sisupporting

confidence: 68%

“…Already in our previous report [19] we mentioned a number of studies on Si [40][41][42]. Research in this material is still very active as is evidenced by the large number of recent publications [43][44][45][46][47][48].…”

Section: Simentioning

confidence: 99%

Atomistic Studies of Nanoindentation—A Review of Recent Advances

2017

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“…Some pathways might have small activation energy barriers (E a ), e.g., small displacements of atoms from their equilibrium positions, and might be overcome by the application of stress, as was calculated for the case of BCT-5. 62,152,153 Other pathways might have prohibitively large barriers, as would be expected for the cases with reconstructive transitions that require atomic diffusion over larger length scales (e.g., Ref. 81 for (b-Sn)-Si to DC-Si).…”

Section: Synthesis From Metastable Precursorsmentioning

confidence: 98%

Pathways to exotic metastable silicon allotropes

Haberl

Strobel

Bradby

2016

Applied Physics Reviews

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The Group 14 element silicon possesses a complex free-energy landscape with many (local) minima, allowing for the formation of a variety of unusual structures, some of which may be stabilized at ambient conditions. Such exotic silicon allotropes represent a significant opportunity to address the ever-increasing demand for novel materials with tailored functionality since these exotic forms are expected to exhibit superlative properties including optimized band gaps for solar power conversion. The application of pressure is a well-recognized and uniquely powerful method to access exotic states of silicon since it promotes large changes to atomic bonding. Conventional high-pressure syntheses, however, lack the capability to access many of these local minima and only four forms of exotic silicon allotropes have been recovered over the last 50 years. However, more recently, significant advances in high pressure methodologies and the use of novel precursor materials have yielded at least three more recoverable exotic Si structures. This review aims to give an overview of these innovative methods of high-pressure application and precursor selection and the recent discoveries of new Si allotropes. The background context of the conventional pressure methods and multitude of predicted new phases are also provided. This review also offers a perspective for possible access to many further exotic functional allotropes not only of silicon but also of other materials, in a technologically feasible manner.

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“…Tuning the electronic, optical, magnetic, and other parameters of materials by applied stress seems to be an effective strategy, which can lead to useful practical appliances. For instance, we can mention a recent progress in prediction and experimental realization of new metastable polymorphs with diverse opto-electronic characteristics in such key industrial semiconductors, as silicon 1 2 3 4 5 6 7 8 9 10 11 12 13 and germanium 14 15 16 17 18 .…”

mentioning

confidence: 99%

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

Korobeinikov

Morozova

Shchennikov

et al. 2017

Sci Rep

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Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material.

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Effect of crystal orientation on the formation of bct-5 silicon

Cited by 22 publications

References 34 publications

Atomistic Studies of Nanoindentation—A Review of Recent Advances

Atomistic Studies of Nanoindentation—A Review of Recent Advances

Pathways to exotic metastable silicon allotropes

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

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